Effects of structural properties of Hf-based gate stack on transistor performance

Materials Research Society Symposium Proceedings

Volumn 811, Issue , 2004, Pages 31-35

  Bersuker, G ^c   Sim, J H ^c   Young, C D ^c   Choi, R ^c   Lee, B H ^a   Lysaght, P ^c   Brown, G A ^c   Zeitzoff, P M ^c   Gardner, M ^b   Murto, R W ^b   Huff, H R ^c  

^a IBM   (United States)

^b AMD ^*

^c International SEMATECH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ELECTRON TRAPS; HAFNIUM COMPOUNDS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PERMITTIVITY; PHASE SEPARATION; POLYCRYSTALLINE MATERIALS; TRANSISTORS;

ELECTRONIC POLARIZATION; GATE STACKS; GRAIN FORMATION; TRANSISTOR MOBILITY;

DIELECTRIC FILMS;

EID: 19944430636     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-811-d2.6     Document Type: Conference Paper

References (6)

1. ITRS, 2003 Edition, SEA, 2003 (http://public.itrs.net)
2. G. Bersuker et al., Materials Today, January 2004, p.26
3. A. S. Foster et al., Phys.Rev.B, 2002, 65, p. 174117
4. A. Kerber et al., IEEE-IRPS Proceedings, 2003, p.41
5. C. Young et al., IEEE-IRPS Proceedings, 2004
6. P. Lysight et al, Microelectron. Eng., 2003, 69, p.182