Relaxation of FN stress induced Vth shift at NMOSFETs with HfSiON gate dielectric and TiN gate electrode

Device Research Conference - Conference Digest, DRC

Volumn , Issue , 2004, Pages 17-18

  Choi, Rino ^a,c   Lee, Byoung Hun ^b   Matthews, K ^c   Sim, J H ^a,c   Bersuker, G ^c   Larson, L ^c   Lee, Jack C ^a  

^a UNIVERSITY OF TEXAS AT AUSTIN   (United States)

^b International SEMATECH ^*  (United States)

^c SEMATECH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLIZATION; DIELECTRIC PROPERTIES; ELECTRIC CHARGE; ELECTRODES; GATES (TRANSISTOR); HAFNIUM COMPOUNDS; SILICA; STRESS RELAXATION; TEMPERATURE DISTRIBUTION; THRESHOLD VOLTAGE;

CHARGE INJECTION; DIELECTRIC BREAKDOWN; ELECTRIC STRESS; VOLTAGE SHIFT;

MOSFET DEVICES;

EID: 15544373212     PISSN: 15483770     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/DRC.2004.1367761     Document Type: Conference Paper

References (3)

1. M. Koyama et al, IEDM Tech. Dig., p849, 2002
2. A. L. P. Rotondaro et al, Symp. VLSI Tech. p. 148, 2002
3. Y. H. Kim et al, IRPS Proc. p. 46, 2003