Charge trapping in MOCVD hafnium-based gate field dielectric stack structures and its impact on device performance

IEEE International Integrated Reliability Workshop Final Report

Volumn 2003-January, Issue , 2003, Pages 28-35

  Young, C D ^a,b   Bersuker, G ^a   Brown, G A ^a   Lim, C ^c   Lysaght, P ^a   Zeitzoff, P ^a   Murto, R W ^a,d   Huff, H R ^a  

^a SEMATECH   (United States)

^b NORTH CAROLINA STATE UNIVERSITY   (United States)

^c Hynix   (United States)

^d TEXAS INSTRUMENTS   (United States)

Author keywords

Current measurement; Degradation; Dielectric devices; Dielectric materials; Dielectric measurements; Electrodes; Electron traps; Hafnium; MOCVD; Threshold voltage

Indexed keywords

CHARGE TRAPPING; ELECTRON TRAPS; GATE DIELECTRICS; HAFNIUM; HIGH-K DIELECTRIC; THRESHOLD VOLTAGE;

CHARGE-TRAPPING; DEVICE PERFORMANCE; DIELECTRIC MEASUREMENTS; DIELECTRIC STACK; GATE FIELD; HIGH- K; MOBILITY DEGRADATION; PROPERTY; STACK STRUCTURE; THRESHOLD-VOLTAGE INSTABILITIES;

ELECTRODES;

EID: 14844285095     PISSN: 19308841     EISSN: 23748036     Source Type: Conference Proceeding    
DOI: 10.1109/IRWS.2003.1283295     Document Type: Conference Paper

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