4H-SiC Epitaxial Growth for High-Power Devices

Materials Science Forum

Volumn 433-436, Issue , 2003, Pages 131-136

  Tsuchida, H ^a   Kamata, I ^a   Jikimoto, T ^a   Miyanagi, T ^a   Izumi, K ^a  

^a CENTRAL RESEARCH INSTITUTE OF ELECTRIC POWER INDUSTRY   (Japan)

Author keywords

Epitaxial Growth; High Voltage; Micropipe; Schottky Barrier Diode; Thick Layers

Indexed keywords

SCHOTTKY BARRIER DIODES; SILICON CARBIDE; SUBSTRATES;

HIGH-POWER DEVICES;

EPITAXIAL GROWTH;

EID: 0242665496     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.433-436.131     Document Type: Conference Paper

References (18)

1. Y. Sugawara, D. Takayama, K. Asano, R. Singh, J. Palmour and T. Hayashi: Proc. of 2001 Inter. Symp. on Power Semic. Dev. and ICs (June 4-7, 2001, Osaka, Japan), p. 27.
2. H. Lendenmann, F. Dahlquist, J.P. Bergman, H. Bleichner and C. Hallin: Mater. Sci. Forum Vol. 389-393 (2002), p. 1259.
3. O. Kordina, C. Hallin, A. Henry, J.P. Bergman, I. Ivanov, A. Ellison, N.T. Son, and E. Janzén: Phys. Stat. Sol. (b) Vol. 202 (1997), p. 321.
4. T. Kimoto, S. Nakazawa, K. Hashimoto and H. Matsunami: Appl. Phys. Lett. Vol. 79 (2001), p. 2761.
5. A. Ellison, J. Zhang, W. Magnusson, A. Henry, Q. Wahab, J.P. Bergman, C. Hemmingsson, N.T. Son, and E. Janzén: J. Cryst. Growth Vol. 236 (2002), p. 225.
6. K. Fujihira, T. Kimoto and H. Matsunami: Mater. Sci. For. Vol. 389-393 (2002), p. 175.
7. H. Tsuchida, I. Kamata, T. Jikimoto and K. Izumi: J. Cryst. Growth Vol. 237-239 (2002), p. 1206.
8. A.A. Burk Jr., M.J. O'Loughlin, and H.D. Nordby Jr.: J. Cryst. Growth Vol. 200 (1999), p. 458.
9. R. Rupp, C. Hecht, A. Wiedenhofer and D. Stephani: Mater. Res. Soc. Symp. Proc. Vol. 572 (1999), p. 149.
10. J. Zhang, U. Forsberg, M. Isaxson, A. Ellison, A. Henry, O. Kordina and E. Janzén: Mater. Sci. Forum Vol. 389-393 (2002), p. 1259.
11. I. Kamata, H. Tsuchida, T. Jikimoto and K. Izumi: submitted to Jpn. J. Appl. Phys.
12. R. Yakimova, M. Syväjärvi, S. Rendakova, V.A. Dimitriev, A. Henry and E. Janzén: Mater. Sci. Forum Vol. 338-342 (2000), p. 237.
13. H. Tsuchida, I. Kamata and K. Izumi: submitted to Jpn. J. Appl. Phys.
14. D.J. Larkin: Phys. stat. sol. (b) Vol. 202 (1997), p. 305.
15. H. Tsuchida, I. Kamata, T. Jikimoto and K. Izumi: Mater. Sci. Forum, Mater. Sci. Forum Vol. 389-393 (2002), p. 171.
16. H. Tsuchida, I. Kamata, T. Jikimoto and K. Izumi: Mater. Res. Soc. Symp. Proc. Vol. 640 (2001), H2.12.1.
17. T. Kimoto, N. Miyamoto and H. Matsunami: IEEE Trans. on Electr. Dev. Vol. 46 (1999), p. 471.
18. Q. Wahab. A. Ellison, A. Henry and E. Janzén: Appl. Phys. Lett. Vol. 76 (2000), p. 2725.