Electrical nonuniformities and their impact on the electron mobility in semi-insulating SiC crystals

Journal of Applied Physics

Volumn 96, Issue 1, 2004, Pages 411-414

  Li, Qiang ^a   Polyakov, Alexander Y ^a   Skowronski, Marek ^a   Roth, Matthew D ^b   Fanton, Mark A ^b   Snyder, David W ^b  

^a CARNEGIE MELLON UNIVERSITY   (United States)

^b PENNSYLVANIA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRICAL NONUNIFORNITIES; PHONON SCATTERING; POTENTIAL FLUCTUATIONS; TEMPERATURE DEPENDENCE;

CARRIER CONCENTRATION; CHARGE CARRIERS; CHEMICAL VAPOR DEPOSITION; CRYSTALLINE MATERIALS; ELECTRIC CONDUCTIVITY; ELECTRIC INSULATING MATERIALS; ELECTRON MOBILITY; HALL EFFECT; HIGH TEMPERATURE EFFECTS; PHONONS; PHOTOCURRENTS; PHYSICAL VAPOR DEPOSITION; SEMICONDUCTOR GROWTH; SILICON WAFERS;

SILICON CARBIDE;

EID: 3142707499     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1739290     Document Type: Article

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