Influence of Material Properties on Wide-Bandgap Microwave Power Device Characteristics

Materials Science Forum

Volumn 433-436, Issue , 2003, Pages 731-736

  Morvan, E ^a   Kerlain, A ^a   Dua, C ^a   Brylinski, C ^a  

^a THALES RESEARCH AND TECHNOLOGY   (France)

Author keywords

Microwave Power Device; SIC; Wide Bandgap Device

Indexed keywords

CHEMICAL VAPOR DEPOSITION; ELECTRON MOBILITY; HIGH ELECTRON MOBILITY TRANSISTORS; HIGH FREQUENCY AMPLIFIERS; MESFET DEVICES; SUBSTRATES; THERMAL CONDUCTIVITY;

BANDGAP;

SILICON CARBIDE;

EID: 18744438178     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.433-436.731     Document Type: Conference Paper

References (3)

1. St.G.Müller, M.F. Brady, W.H. Brixius, G. Fechko, R.C. Glass, and al. Proceedings of IEDM 2001 conference.
2. A. S. Royet, T. Ouisse, B. Gabon, O. Noblanc, C. Arnodo, and C. Brylinski, IEEE transaction On Electron devices, Vol.47, n°11, 2000,
3. Special issue on Wide Bandgap Semiconductor Devices Proceedings of the IEEE, June 2002, vol. 90, N°6