High-purity semi-insulating 4H-SiC for microwave device applications

Journal of Electronic Materials

Volumn 32, Issue 5, 2003, Pages 432-436

  Jenny, J R ^a   Malta, D P ^a   Muller St G ^a   Powell, A R ^a   Tsvetkov, V F ^a   Hobgood, H McD ^a   Glass, R C ^a   Carter Jr , C H ^a  

^a Arkansas Power Electronics International Inc   (United States)

Author keywords

4H SiC; DLTS; EPR; Hall effect; High purity semi insulating; HPSI; OAS; PVT; Resistivity; Seeded sublimation; SIMS; Thermal conductivity

Indexed keywords

ELECTRIC CONDUCTIVITY OF SOLIDS; HALL EFFECT; INSULATING MATERIALS; MICROWAVE DEVICES; PARAMAGNETIC RESONANCE; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR DOPING; SUBLIMATION; THERMAL CONDUCTIVITY OF SOLIDS; THERMODYNAMIC STABILITY;

OPTICAL ADMITTANCE SPECTROSCOPY (OAS); SEMI-INSULATING SEMICONDUCTORS;

SILICON CARBIDE;

EID: 0038242290     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-003-0173-4     Document Type: Conference Paper

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