Radiation effects in silicon detectors processed on carbon and oxygen-rich substrates

Materials Science in Semiconductor Processing

Volumn 3, Issue 4, 2000, Pages 257-261

  Ruzin, A ^a   Casse, G ^b   Glaser, M ^a   Lemeilleur, F ^a   Matheson, J ^a   Watts, S ^c   Zanet, A ^a  

^a TEL AVIV UNIVERSITY   (Israel)

^b UNIVERSITY OF LIVERPOOL   (United Kingdom)

^c BRUNEL UNIVERSITY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON; NEUTRONS; NUCLEAR REACTORS; OXYGEN; PROTONS; RADIATION DAMAGE; SEMICONDUCTING SILICON; SUBSTRATES;

BULK FLOAT-ZONE (FZ) MATERIALS;

PARTICLE DETECTORS;

EID: 0034240730     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1369-8001(00)00041-X     Document Type: Article

References (9)

1. Ruzin A., Casse G., Glaser M., Lemeilleur M. Studies of radiation hardness of oxygen enriched silicon detectors. Nucl Instr and Meth A. 426:1999;94-98.
2. Nossarzewska-Orlowska E, Luczynski Z, Kozlowski R, Brzozowski, Zabierowski P, Majerowski B. Characterisation of ITME silicon for detectors. Proceedings of the Third ROSE Workshop, DESY-Proceedings-1998-02, Hamburg, Germany, February 1998.
3. Van Ginneken A. Non ionizing energy deposition in silicon for radiation damage studies. Fermi National Accelerator Laboratory, internal report FN-522, 1989.
4. Bruke E.A. Energy dependence of proton-induced displacement damage in silicon. IEEE Trans Nucl Sci. NS-33(6):1986;1276-1281.
5. Summers G.P., Bruke E.A., Dale C.J., Wolicki E.A., Marshal P.W., Gehlhausen M.A. Correlation of particle-induced displacement damage in silicon. IEEE Trans Nucl Sci. NS-34(6):1987;1134-1139.
6. Cindro V., Kramberger G., Mikuz M., Zontar D. Bias-dependent annealing of radiation damage in neutron-irradiated silicon p+-n-n+ diodes. Nucl Instr And Meth A. 419:1998;132-136.
7. Moll M., Feick H., Fretwurst E., Lindström G., Schultz T. Observation of a bistable defect generated and activated by heat treatment in irradiated high resistivity silicon detectors. Nucl Phys B. 44(Proc. Suppl.):1995;468-474.
8. Fretwurst E., Feick H., Glaser M., Gössling C., Heijne E.H.M., Hess A., Lemeilleur F., Lindström F., Mahlmann K.H., Rolf A., Schultz T., Soave C. Reverse annealing of the effective impurity concentration and long term operation scenario for silicon detectors in future collider experiments. Nucl Instr and Meth A. 342:1994;119-125.
9. Li Z., Chen W., Dou L., Eremin V., Kraner H.W., Li C.J., Lindström G., Spiriti E. Study of the long term stability of the effective concentration of ionized space charges (Neff) of neutron irradiated silicon detectors fabricated by various thermal oxidation processes. IEEE Trans Nucl Sci. NS-42(4):1995;219-223.