Deep-level transient spectroscopy study of hydrogen-related traps formed by wet chemical etching in electron-irradiated n-Type silicon

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 37, Issue 4 SUPPL. A, 1998, Pages 1815-1816

  Tokuda, Yutaka ^a  

^a AICHI INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

DLTS; Electron irradiation; Etching; Hydrogen; Silicon

Indexed keywords

DEEP LEVEL TRANSIENT SPECTROSCOPY; ETCHING; HYDROGEN; ION IMPLANTATION; REDUCTION;

ELECTRON IRRADIATION; WET CHEMICAL ETCHING;

SEMICONDUCTING SILICON;

EID: 0032050807     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.1815     Document Type: Article

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