High resolution deep level transient spectroscopy studies of the vacancy-oxygen and related defects in ion-implanted silicon

Journal of Applied Physics

Volumn 92, Issue 7, 2002, Pages 3755-3760

  Evans Freeman, J H ^a   Kan, P Y Y ^a   Abdelgader, N ^a  

^a UNIVERSITY OF MANCHESTER   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CAPTURE CROSS SECTIONS; DLTS SPECTRA; ELECTRON-CAPTURE CROSS SECTIONS; EMISSION RATES; HIGH RESOLUTION; ION-IMPLANTED SILICON; LAPLACE DEEP LEVEL TRANSIENT SPECTROSCOPIES; LOW DOSE; WET CHEMICAL PROCESSING;

ACTIVATION ENERGY; CHEMICAL INDUSTRY; DEEP LEVEL TRANSIENT SPECTROSCOPY; ERBIUM; GERMANIUM; HYDROGEN; IONS; OXYGEN; YTTERBIUM;

DEFECTS;

EID: 18644367505     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1497721     Document Type: Article

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