Deep Levels in High-Temperature 1 MeV Electron-Irradiated n-Type Czochralski Silicon

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 42, Issue 12, 2003, Pages 7184-7188

  Simoen, Eddy ^a   RAFÍ, Joan Marc ^a   Claeys, Cor ^a,b   Neimash, Vlad ^c   Kraitchinskii, Anatolii ^c   Kras'ko, Mykola ^c   Tischenko, Valerii ^c   Voitovych, Vasyl ^c   Versluys, Jorg ^d   Clauws, Paul ^d  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

^c INSTITUTE OF PHYSICS   (Ukraine)

^d GHENT UNIVERSITY   (Belgium)

Author keywords

Czochralski silicon; High temperature electron irradiation; Oxygen thermal donors; Radiation induced defects

Indexed keywords

ANNEALING; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRON BEAMS; ELECTRON IRRADIATION; HIGH TEMPERATURE EFFECTS; OXYGEN; PARAMAGNETIC RESONANCE; RADIATION EFFECTS; SCHOTTKY BARRIER DIODES;

CZOCHRALSKI SILICON; HIGH-TEMPERATURE ELECTRON IRRADIATION; OXYGEN THERMAL DONORS; RADIATION-INDUCED DEFECTS;

SILICON;

EID: 10744229984     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.42.7184     Document Type: Article

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