DLTS Studies of high-temperature electron irradiated Cz n-Si

Physica Status Solidi (A) Applied Research

Volumn 201, Issue 3, 2004, Pages 509-516

  Neimash, V ^a   Kras'ko, M ^a   Kraitchinskii, A ^a   Voytovych, V ^a   Tishchenko, V ^a   Simoen, E ^b   Rafi, J M ^b   Claeys, C ^b,c   Versluys, J ^d   De Gryse, O ^d   Clauws, P ^d  

^a INSTITUTE OF PHYSICS   (Ukraine)

^b IMEC   (Belgium)

^c UNIVERSITY OF LEUVEN   (Belgium)

^d GHENT UNIVERSITY   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

DEEP LEVEL TRANSIENT SPECTROSCOPY; DIFFUSION; ELECTRON BEAMS; ELECTRON IRRADIATION; HEAT TREATMENT; HIGH TEMPERATURE EFFECTS; RADIATION EFFECTS;

OXYGEN-RELATED THERMAL DONORS (OTD); RADIATION INDUCED DEFECTS (RD);

SEMICONDUCTING SILICON;

EID: 12144287367     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssa.200306750     Document Type: Article

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