High-energy proton radiation induced defects in tin-doped n-type silicon

Physica B: Condensed Matter

Volumn 308-310, Issue , 2001, Pages 477-480

  Simoen, E ^a   Claeys, C ^a,b   Privitera, V ^c   Coffa, S ^c   Nylandsted Larsen, A ^d   Clauws, P ^e  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

^c CNR   (Italy)

^d AARHUS UNIVERSITY   (Denmark)

^e GHENT UNIVERSITY   (Belgium)

Author keywords

Deep level transient spectroscopy; N type silicon; Photoluminescence; Proton irradiation; Tin vacancy

Indexed keywords

CRYSTAL DEFECTS; CRYSTAL GROWTH FROM MELT; DEEP LEVEL TRANSIENT SPECTROSCOPY; DOPING (ADDITIVES); ELECTRON TRAPS; PHOTOLUMINESCENCE; PROTON IRRADIATION; TIN;

RADIATION DEFECTS;

SEMICONDUCTING SILICON;

EID: 0035671599     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-4526(01)00746-3     Document Type: Article

References (15)