Annealing kinetics of vacancy-related defects in low-dose MeV self-ion-implanted n-type silicon

Physical Review B - Condensed Matter and Materials Physics

Volumn 64, Issue 19, 2001, Pages

  Pellegrino, P ^a   Leveque P ^a   Lalita, J ^a   Hallen A ^a   Jagadish, C ^a   Svensson, B G ^b  

^a AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

^b UNIVERSITY OF OSLO   (Norway)

Author keywords

[No Author keywords available]

Indexed keywords

SILICON;

ARTICLE; COMPUTER SIMULATION; DIFFUSION; ELECTRONICS; IRRADIATION; SPECTROSCOPY; TEMPERATURE;

EID: 0035891151     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.64.195211     Document Type: Article

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