Electronically induced instability of a hydrogen-carbon complex in silicon and its dissociation mechanism

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 36, Issue 11, 1997, Pages 6579-6590

  Kamiura, Yoichi ^a   Hayashi, Masao ^a,b   Nishiyama, Yoshihide ^a,c   Ohyama, Shigeki ^a   Yamashita, Yoshifumi ^a  

^a OKAYAMA UNIVERSITY   (Japan)

^b FUJITSU LABORATORIES LTD   (Japan)

^c OMRON CORPORATION   (Japan)

Author keywords

Carbon; Defect; Dissociation; DLTS; Hydrogen; Photoexcitation; Silicon; Stability

Indexed keywords

ACTIVATION ENERGY; BAND STRUCTURE; CARBON; CHEMICAL BONDS; CRYSTAL ATOMIC STRUCTURE; CRYSTAL DEFECTS; CRYSTALLINE MATERIALS; DEEP LEVEL TRANSIENT SPECTROSCOPY; DISSOCIATION; ELECTRON TRANSITIONS; HYDROGEN; REACTION KINETICS;

PHOTOEXCITATION;

SEMICONDUCTING SILICON;

EID: 0031274256     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.6579     Document Type: Article

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