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Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 186, Issue 1-4, 2002, Pages 309-312

Generation of defects induced by MeV proton implantation in silicon - Influence of nuclear losses

(4) David, M L a Oliviero, E a Blanchard, C a Barbot, J F a

a UNIVERSITÉ DE POITIERS (France)

Author keywords

DLTS; Hydrogen; Implantation; Silicon

Indexed keywords

ANNEALING; BAND STRUCTURE; CRYSTAL DEFECTS; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRON TRAPS; ION IMPLANTATION; PROTON IRRADIATION; RADIATION DAMAGE;

CONDUCTION BANDS; NUCLEAR LOSSES;

SEMICONDUCTING SILICON;

EID: 0036135502 PISSN: 0168583X EISSN: None Source Type: Journal
DOI: 10.1016/S0168-583X(01)00895-3 Document Type: Article

Times cited : (6)

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