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Journal of Applied Physics

Volumn 87, Issue 12, 2000, Pages 8389-8392

Influence of the dopant species on radiation-induced defects in Si single crystals

(7) Khan, Aurangzeb a Yamaguchi, Masafumi a Kaneiwa, Minoru b Saga, Tatsue b Abe, Takao c Annzawa, Osamu d Matsuda, Sumio d

a TOYOTA TECHNOLOGICAL INSTITUTE (Japan)

b SHARP CORPORATION (Japan)

c SHIN ETSU CHEMICAL CO LTD (Japan)

d JAPAN AEROSPACE EXPLORATION AGENCY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001377308 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.373552 Document Type: Article

Times cited : (23)

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