Annealing and hydrogenation behaviors of electron-beam induced defects in n-type Si

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 7 B, 1999, Pages 4047-4048

  Ohmura, Yamichi ^a   Hayakawa, Chiyuki ^a   Suzuki, Takao ^a   Tajima, Kenji ^a  

^a IWAKI MEISEI UNIVERSITY   (Japan)

Author keywords

Annealing; Boiling; Deep level transient spectroscopy; Deep levels; Electron irradiation; Hydrogenation; n Si

Indexed keywords

ACTIVATION ENERGY; ANNEALING; BAND STRUCTURE; BOILING LIQUIDS; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRIC CONDUCTIVITY; ELECTRON BEAMS; ELECTRON ENERGY LEVELS; EPITAXIAL GROWTH; HYDROGENATION; SILICON WAFERS;

CONDUCTION BAND; DEEP LEVELS; RADIATION INDUCED DEFECT HYDROGEN COMPLEX;

ELECTRON IRRADIATION;

EID: 0033313473     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.4047     Document Type: Article

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