Vacancy-hydrogen defects in silicon studied by Raman spectroscopy

Physical Review B - Condensed Matter and Materials Physics

Volumn 64, Issue 3, 2001, Pages

  Lavrov, E V ^a   Weber, J ^a   Huang, L ^b   Nielsen, B Bech ^c  

^a DRESDEN UNIVERSITY OF TECHNOLOGY   (Germany)

^b DUKE UNIVERSITY   (United States)

^c AARHUS UNIVERSITY   (Denmark)

Author keywords

[No Author keywords available]

Indexed keywords

HYDROGEN; SILICON;

ARTICLE; CALCULATION; HYDROGEN BOND; PHYSICS; POLARIZATION; RAMAN SPECTROMETRY;

EID: 0034909149     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.64.035204     Document Type: Article

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