The hydrogen-saturated self-interstitial in silicon and germanium

Materials Science Forum

Volumn 258-263, Issue PART 1, 1997, Pages 35-40

  Budde, M ^a   Bech Nielsen, B ^a   Leary, P ^b   Goss, J ^b   Jones, R ^b   Briddon, P R ^c   Oberg S ^d   Breuer, S J ^e  

^a AARHUS UNIVERSITY   (Denmark)

^b UNIVERSITY OF EXETER   (United Kingdom)

^c NEWCASTLE UNIVERSITY   (United Kingdom)

^d LULEÅ UNIVERSITY OF TECHNOLOGY   (Sweden)

^e UNIVERSITY OF EDINBURGH   (United Kingdom)

Author keywords

ab initio theory; Ge; H; IR spectroscopy; Self interstitial; Si; Uniaxial stress

Indexed keywords

ABSORPTION SPECTROSCOPY; CHEMICAL BONDS; COMPUTATIONAL METHODS; CRYSTAL ORIENTATION; CRYSTAL SYMMETRY; HYDROGEN; INFRARED SPECTROSCOPY; ION IMPLANTATION; LATTICE VIBRATIONS; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON;

LOCAL VIBRATIONAL MODES; SELF INTERSTITIAL;

POINT DEFECTS;

EID: 3743083847     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.258-263.35     Document Type: Article

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