Interfacial reaction in the growth of epitaxial SrTi O3 thin films on (001) Si substrates

Journal of Applied Physics

Volumn 97, Issue 10, 2005, Pages

  He, J Q ^a,d   Jia, C L ^a   Vaithyanathan, V ^b   Schlom, D G ^b   Schubert, J ^a   Gerber, A ^a   Kohlstedt, H H ^a   Wang, R H ^c  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

^b PENNSYLVANIA STATE UNIVERSITY   (United States)

^c WUHAN UNIVERSITY   (China)

^d BROOKHAVEN NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

FLUX RATIOS; INTERFACE REACTIVITY; KINETIC EFFECTS; PRECIPITATES;

AMORPHOUS MATERIALS; CRYSTALLINE MATERIALS; INTERFACES (MATERIALS); MICROSTRUCTURE; MOLECULAR BEAM EPITAXY; SILICON; STRONTIUM COMPOUNDS; SUBSTRATES; THERMODYNAMICS; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY;

EPITAXIAL GROWTH;

EID: 21044433345     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1915519     Document Type: Article

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