-
2
-
-
85103570927
-
-
19.2. Nicollian EH, Brews JR (1982) MOS (Metal Oxide Semiconductor) Physics and Technology, J Wiley and Sons, New York:Chapter 2
-
19.2. Nicollian EH, Brews JR (1982) MOS (Metal Oxide Semiconductor) Physics and Technology, J Wiley and Sons, New York:Chapter 2
-
-
-
-
3
-
-
0032662220
-
Modeling study of ultrathin gate oxides using direct tunneling current and capacitance-voltage measurements in MOS devices
-
Yang N, Henson WK, Hauser JR, Wortman JJ (1999) Modeling study of ultrathin gate oxides using direct tunneling current and capacitance-voltage measurements in MOS devices, IEEE Trans. El. Dev. 46(7):1464
-
(1999)
IEEE Trans. El. Dev
, vol.46
, Issue.7
, pp. 1464
-
-
Yang, N.1
Henson, W.K.2
Hauser, J.R.3
Wortman, J.J.4
-
4
-
-
0001156050
-
Self-consistent results for n-type Si inversion layers
-
19.4. Stern F (1972) Self-consistent results for n-type Si inversion layers, Phys. Rev. B 5:4891
-
(1972)
Phys. Rev. B
, vol.5
, pp. 4891
-
-
-
5
-
-
0034268709
-
Theoretical and experimental investigation of ultrathin oxynitrides and the role of nitrogen at the Si– SiO2 interface
-
Demkov A A, Liu R, Zhang, Xiaodong, Loechelt Heather (2000) Theoretical and experimental investigation of ultrathin oxynitrides and the role of nitrogen at the Si– SiO2 interface, J. Vac. Sci. Techno. B 18(5):2388
-
(2000)
J. Vac. Sci. Techno. B
, vol.18
, Issue.5
, pp. 2388
-
-
Demkov, A.A.1
Liu, R.2
Zhang, X.3
Heather, L.4
-
6
-
-
0032662942
-
Modeling and characterization of quantization, polysilicon depletion, and direct tunneling effects in MOSFETs with ultrathin oxides
-
19.6. Lo SH, Buchanan DA, Tau Y (1999) Modeling and characterization of quantization, polysilicon depletion, and direct tunneling effects in MOSFETs with ultrathin oxides, IBM J. Res. and Dev. 43(3):327
-
(1999)
IBM J. Res. and Dev.
, vol.43
, Issue.3
, pp. 327
-
-
-
7
-
-
0001597428
-
-
19.7. Tershoff J (1984) Phys. Rev. Lett. 52:465
-
(1984)
Phys. Rev. Lett.
, vol.52
, pp. 465
-
-
-
9
-
-
0342955088
-
-
19.9. Tung RT (2000) Chemical bonding and Fermi level pinning at metal-semiconductor interfaces, Phys Rev Lett 84 (26):6078 (2000) and Tung RT (2001) Formation of an electric dipole at metal-semiconductor interfaces, Phys. Rev. B 64 (20):205310
-
19.9. Tung RT (2000) Chemical bonding and Fermi level pinning at metal-semiconductor interfaces, Phys Rev Lett 84 (26):6078 (2000) and Tung RT (2001) Formation of an electric dipole at metal-semiconductor interfaces, Phys. Rev. B 64 (20):205310
-
-
-
-
10
-
-
4244101024
-
Crystalline Oxides on Silicon: The First Five Monolayers
-
19.10. McKee RA, Walker FJ, Chisholm MF (1998) Crystalline Oxides on Silicon: The First Five Monolayers, Phys. Rev. Lett. 81 (14):3114
-
(1998)
Phys. Rev. Lett.
, vol.81
, Issue.14
, pp. 3114
-
-
-
11
-
-
0035919629
-
Physical Structure and Inversion Charge at a Semiconductor Interface with a Crystalline Oxide
-
19.11. McKee RA, Walker FJ, Chisholm MF (2001) Physical Structure and Inversion Charge at a Semiconductor Interface with a Crystalline Oxide, Science 293:468
-
(2001)
Science
, vol.293
, pp. 468
-
-
-
14
-
-
0026413263
-
Growth of supercon-ducting Bi2Sr2Ca n−1Cu nO x
-
Eckstein JN, Bozovic I, Schlom DG, Harris JS (1991) Growth of supercon-ducting Bi2Sr2Ca n−1Cu nO x, J. Cryst. Growth 111:973
-
(1991)
J. Cryst. Growth
, vol.111
, pp. 973
-
-
Eckstein, J.N.1
Bozovic, I.2
Schlom, D.G.3
Harris, J.S.4
-
15
-
-
84956038841
-
Characterization of radio-frequency plasma source for molecular-beam epitaxial-growth of high-Tc superconductor films
-
19.15. Locquet JP, Machler E (1992) Characterization of radio-frequency plasma source for molecular-beam epitaxial-growth of high-Tc superconductor films, J. Vac. Sci. and Tech. A 10 (5):3100
-
(1992)
J. Vac. Sci. and Tech. A
, vol.10
, Issue.5
, pp. 3100
-
-
-
16
-
-
0000580865
-
Analysis of reflection high energy electron diffraction data from reconstructed semiconductor Surfaces
-
19.16. Boyce BA, Neave JH, Dobson PJ, Larsen PK (1984) Analysis of reflection high energy electron diffraction data from reconstructed semiconductor Surfaces, Phys. Rev. B 29:814
-
(1984)
Phys. Rev. B
, vol.29
, pp. 814
-
-
-
17
-
-
36149028950
-
Constraints on the growth of metallic superlattices
-
Flynn CP (1988) Constraints on the growth of metallic superlattices, J. Phys. F 18 (9):L195
-
(1988)
J. Phys. F
, vol.18
, Issue.9
, pp. L195
-
-
Flynn, C.P.1
-
19
-
-
0023408113
-
Morphological Transitions in Solid Eptiaxial Overlayers
-
19.19. Bruinsma R, Zangwill A (1987) Morphological Transitions in Solid Eptiaxial Overlayers, Europhys. Lett. 4 (6):729
-
(1987)
Europhys. Lett.
, vol.4
, Issue.6
, pp. 729
-
-
-
20
-
-
0001757131
-
Thin-film Growth modes, wetting and cluster nucleation
-
19.20. Grabow MH, Gilmer GH (1988) Thin-film Growth modes, wetting and cluster nucleation, Surf. Sci. 194 (3):333-346
-
(1988)
Surf. Sci.
, vol.194
, Issue.3
, pp. 333-346
-
-
-
21
-
-
0000891887
-
Growth of alkali halides from molecular beams: Global growth characteristics, Phys
-
Yang MH, Flynn CP (1989) Growth of alkali halides from molecular beams: Global growth characteristics, Phys. Rev. Lett. 62 (21):2476
-
(1989)
Rev. Lett
, vol.62
, Issue.21
, pp. 2476
-
-
Yang, M.H.1
Flynn, C.P.2
-
22
-
-
0035876350
-
Structural variants in heteroepitaxial growth
-
Flynn CP, Eades JA (2001) Structural variants in heteroepitaxial growth, Thin Solid Films 389:116
-
(2001)
Thin Solid Films
, vol.389
, pp. 116
-
-
Flynn, C.P.1
Eades, J.A.2
-
24
-
-
0029756060
-
2on (100) silicon using RHEED and SEM
-
2on (100) silicon using RHEED and SEM, Thin Solid Films 272:87
-
(1996)
Thin Solid Films
, vol.272
, pp. 87
-
-
-
25
-
-
85176537746
-
2:Si(100) epitaxy, Appl. Phys
-
2:Si(100) epitaxy, Appl. Phys. Lett. 46 (10):948
-
(1985)
Lett
, vol.46
, Issue.10
, pp. 948
-
-
Pfiefer, L.1
Phillips, J.M.2
Smith, T.P.3
Augustyriak, W.M.4
West, K.W.5
-
26
-
-
0001657281
-
2 and thin film alkaline earth silicides on silicon
-
2 and thin film alkaline earth silicides on silicon, Appl. Phys. Lett. 63 (20):2818
-
(1993)
Appl. Phys. Lett.
, vol.63
, Issue.20
, pp. 2818
-
-
-
28
-
-
85103576222
-
-
19.28. Krebs H, Walter PHL (1968) Fundamentals of Inorganic Crystal Chemistry, McGraw-Hill, London:Chapter 23
-
19.28. Krebs H, Walter PHL (1968) Fundamentals of Inorganic Crystal Chemistry, McGraw-Hill, London:Chapter 23
-
-
-
-
29
-
-
0035794335
-
3 on Si and its nanoscale piezoelectric properties
-
3 on Si and its nanoscale piezoelectric properties, Appl. Phys. Lett. 78 (14):2034
-
(2001)
Appl. Phys. Lett.
, vol.78
, Issue.14
, pp. 2034
-
-
-
30
-
-
0037849705
-
-
London: and references contained therein
-
19.30. Stoneham AM and Dhote J (2002) A compilation of crystal data for halides and oxides, http://www.cmmp.ucl.ac.uk/∼ahh/research/crystal/homepage.htm, University College London, London: and references contained therein
-
(2002)
A Compilation of Crystal Data for Halides and Oxides
-
-
-
31
-
-
0041944461
-
Crystal tructure of double oxides of the perovskite type
-
19.31. Megaw HD (1946) Crystal tructure of double oxides of the perovskite type, Proc. Of the Phys. Soc. London 58:133
-
(1946)
Proc. of the Phys. Soc. London
, vol.58
, pp. 133
-
-
-
32
-
-
0343093446
-
CRC Handbook of Chemistry and Physics, 75th edn
-
Lide David R (1995) CRC Handbook of Chemistry and Physics, 75th edn, CRC Press
-
(1995)
CRC Press
-
-
Lide David, R.1
-
34
-
-
84978580504
-
X-ray and Neutron Diffraction Study of Tetragonal Barium Titanate
-
19.34. Kwei GH, Lawson AC, Billinge SJL, Cheong S-W (1993) Structures of the ferroelectric phases of barium titanate, J. Phys Chem 97, 2368; and Harada J, Pedersen T, Barnea Z (1970) X-ray and Neutron Diffraction Study of Tetragonal Barium Titanate, Acta Crystallogr. 26:336
-
(1970)
Acta Crystallogr
, vol.26
, pp. 336
-
-
-
37
-
-
36449008603
-
Molecular-beam eptiaxy growth of epitaxial Barium silicide, Barium Oxide, and Barium-Titanate on silicon
-
19.37. McKee RA, Walker FJ, J. R. Conner JR, Specht ED, Zelmon DE (1991) Molecular-beam eptiaxy growth of epitaxial Barium silicide, Barium Oxide, and Barium-Titanate on silicon, Appl. Phys. Lett. 59 (7):782
-
(1991)
Appl. Phys. Lett.
, vol.59
, Issue.7
, pp. 782
-
-
-
38
-
-
0003459529
-
-
Perkin-Elmer Corp, Eden Prarie, MN
-
Wagner CD, Riggs WM, Davis LE, Moulder JF, Muilenberg GE (1979) Handbook of X-Ray Photoelectron Spectroscopy, Perkin-Elmer Corp, Eden Prarie, MN
-
(1979)
Handbook of X-Ray Photoelectron Spectroscopy
-
-
Wagner, C.D.1
Riggs, W.M.2
Davis, L.E.3
Moulder, J.F.4
Muilenberg, G.E.5
-
40
-
-
0035422529
-
3 (001) evaluated by reflection high-energy electron diffraction
-
3 (001) evaluated by reflection high-energy electron diffraction, Materials Letters 50:134
-
(2001)
Materials Letters
, vol.50
, pp. 134
-
-
Lee, G.H.1
Shin, B.C.2
Kim, I.S.3
-
41
-
-
21544436965
-
3 superlattices using pulsed laser deposition and their dielectric properties
-
3 superlattices using pulsed laser deposition and their dielectric properties, Appl. Phys. Lett. 65 (15):1970
-
(1994)
Appl. Phys. Lett.
, vol.65
, Issue.15
, pp. 1970
-
-
-
42
-
-
0035398990
-
Epitaxial oxides on silicon grown by molecular beam epitaxy
-
Droopad R, Yu ZY, Ramdani J, Hilt L, Curless J, Overgaard C, Edwards JL, Finder J, Eisenbeiser K, Wang J, Kaushik V, Ngyuen BY, Ooms B (2001) Epitaxial oxides on silicon grown by molecular beam epitaxy, J. Cryst. Growth 227:936
-
(2001)
J. Cryst. Growth
, vol.227
, pp. 936
-
-
Droopad, R.1
Yu, Z.Y.2
Ramdani, J.3
Hilt, L.4
Curless, J.5
Overgaard, C.6
Edwards, J.L.7
Finder, J.8
Eisenbeiser, K.9
Wang, J.10
Kaushik, V.11
Ngyuen, B.Y.12
Ooms, B.13
-
44
-
-
0035894205
-
Photoemission from the Sr/Si(001) interface
-
Herrera-Gomez A, Aguirre-Tostado FS, Sun Y, Pianetta P, Yu Z, Marshall D, Droopad R, Spicer WE (2001) Photoemission from the Sr/Si(001) interface, J. Appl. Phys. 90 (12):6070
-
(2001)
J. Appl. Phys
, vol.90
, Issue.12
, pp. 6070
-
-
Herrera-Gomez, A.1
Aguirre-Tostado, F.S.2
Sun, Y.3
Pianetta, P.4
Yu, Z.5
Marshall, D.6
Droopad, R.7
Spicer, W.E.8
-
45
-
-
0033893350
-
The (3x2) phase of Ba adsorption on Si(001)-2x1, Surf
-
Hu X, Yao X, Peterson CA, Sarid D, Yu Z, Wang J, Marshall DS, Droopad R, Hallmark JA, Ooms WJ (2000) The (3x2) phase of Ba adsorption on Si(001)-2x1, Surf. Sci. 44:256
-
(2000)
Sci
, vol.44
, pp. 256
-
-
Hu, X.1
Yao, X.2
Peterson, C.A.3
Sarid, D.4
Yu, Z.5
Wang, J.6
Marshall, D.S.7
Droopad, R.8
Hallmark, J.A.9
Ooms, W.J.10
-
46
-
-
0030562649
-
STM study of Sr adsorption on Si(100) surface, Appl. Surf
-
Bakhtizin RZ, Kishimoto J, Hashizume T, Sakurai T (1996) STM study of Sr adsorption on Si(100) surface, Appl. Surf. Sci. 94/95:478
-
(1996)
Sci
, vol.94
, pp. 478
-
-
Bakhtizin, R.Z.1
Kishimoto, J.2
Hashizume, T.3
Sakurai, T.4
-
47
-
-
0242662327
-
X-ray standing wave study of the Sr/Si(001) 2x3 surface
-
Goodner DM, Marasco DL, Escuardo AA, Cao L, Tinkham BP, Bedzyk MJ (2003) X-ray standing wave study of the Sr/Si(001) 2x3 surface, Surface Science 547:19
-
(2003)
Surface Science
, vol.547
, pp. 19
-
-
Goodner, D.M.1
Marasco, D.L.2
Escuardo, A.A.3
Cao, L.4
Tinkham, B.P.5
Bedzyk, M.J.6
-
48
-
-
85103590480
-
-
19.48. Stocks GM, Shelton WA, private communication
-
19.48. Stocks GM, Shelton WA, private communication
-
-
-
-
49
-
-
84917805323
-
Segregation of isovalent impurity cations at the surfaces of MgO and CaO
-
Tasker PW, Colbourn EA, Mackrodt WC (1985) Segregation of isovalent impurity cations at the surfaces of MgO and CaO, J. Am. Ceram. Soc. 68 (2):74
-
(1985)
J. Am. Ceram. Soc
, vol.68
, Issue.2
, pp. 74
-
-
Tasker, P.W.1
Colbourn, E.A.2
Mackrodt, W.C.3
-
50
-
-
0036649104
-
Critical issues in the heteroepitaxial growth of alkaline-earth oxides on silicon
-
Lettieri J, Haeni JH, Schlom DG (2002) Critical issues in the heteroepitaxial growth of alkaline-earth oxides on silicon, J. Vac. Sci. Technol. A 20 (4):1332
-
(2002)
J. Vac. Sci. Technol. A
, vol.20
, Issue.4
, pp. 1332
-
-
Lettieri, J.1
Haeni, J.H.2
Schlom, D.G.3
-
51
-
-
0034301341
-
Limitations for aggressively scaled CMOS Si devices due to bond coordination constraints and reduced band offset energies at Si-high-k dielectric interfaces
-
19.51. Lucovsky G, Phillips JC (2000) Limitations for aggressively scaled CMOS Si devices due to bond coordination constraints and reduced band offset energies at Si-high-k dielectric interfaces, Appl. Surf. Sci. 166:497
-
(2000)
Appl. Surf. Sci.
, vol.166
, pp. 497
-
-
-
52
-
-
85103545254
-
MOS(Metal Oxide Semiconductor) Physics and Technology, John Wiley & Sons
-
it and ∆C); Nicollian EH, Brews JR (1982) MOS(Metal Oxide Semiconductor) Physics and Technology, John Wiley & Sons, New York:332
-
(1982)
New York
, pp. 332
-
-
-
53
-
-
85103556548
-
-
19.53. Arora Narain (1993) MOSFET Models for VLSI Circuit Simulation, Springer Verlag, Wien, New York:Chapter 6
-
19.53. Arora Narain (1993) MOSFET Models for VLSI Circuit Simulation, Springer Verlag, Wien, New York:Chapter 6
-
-
-
-
54
-
-
0016510203
-
-
19.54. Brews JR (1975) Theory of carrier-density fluctuations in an IGFET near threshold, J Appl Phys 46:2181; and Brews JR (1975) Carrier-density fluctuations and IGFET mobility near threshold, J. Appl. Phys. 46:2193
-
19.54. Brews JR (1975) Theory of carrier-density fluctuations in an IGFET near threshold, J Appl Phys 46:2181; and Brews JR (1975) Carrier-density fluctuations and IGFET mobility near threshold, J. Appl. Phys. 46:2193
-
-
-
-
55
-
-
85103604018
-
3 interfacial template structure on semiconductor-based material and the growth of electro ceramic thin-films in the perovskite class, US Patent No
-
3 interfacial template structure on semiconductor-based material and the growth of electro ceramic thin-films in the perovskite class, US Patent No. 5,830,270
-
(1998)
, vol.830
, pp. 270
-
-
McKee, R.A.1
Walker, F.J.2
|