Electrical characteristics of epitaxially grown SrTiO3 on silicon for metal-insulator-semiconductor gate dielectric applications

IEEE Electron Device Letters

Volumn 24, Issue 4, 2003, Pages 218-220

  Jeon, Sanghun ^a,b   Walker, Frederick J ^b   Billman, Curtis A ^b   McKee, Rodney A ^b   Hwang, Hyunsang ^a  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

^b OAK RIDGE NATIONAL LABORATORY   (United States)

Author keywords

Crystalline oxide; EOT; Fixed oxide charge; High k; Interface trap density; MBE

Indexed keywords

ANNEALING; CURRENT DENSITY; DIELECTRIC MATERIALS; ELECTRIC PROPERTIES; GATES (TRANSISTOR); LEAKAGE CURRENTS; MIS DEVICES; MOLECULAR BEAM EPITAXY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING SILICON; SILICON WAFERS; THIN FILMS;

CRYSTALLINE OXIDE; EQUIVALENT OXIDE THICKNESS; FIXED OXIDE CHARGE; FORMING GAS ANNEALING; INTERFACE TRAP DENSITY; STRONTIUM TITANATE;

STRONTIUM COMPOUNDS;

EID: 0038104355     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2003.810886     Document Type: Letter

References (16)

1. The National Technology Roadmap for Semiconductors, Semicond. Ind. Assoc., 2001.
2. 2 gate dielectric MOSFETs with TaN electrode and nitridation surface preparation," in VLSI Tech. Dig., 2001, pp. 15-16.
3. 2 gate dielectrics and self-aligned TaN and TaN/Poly-Si gate electrodes," in VLSI Tech. Dig., 2001, pp. 137-138.
4. G. D. Wilk and R. M. Wallace, "Electrical properties of hafnium silicate gate dielectrics deposited directly on silicon," Appl. Phys. Lett., vol. 74, pp. 2854-2856, 1999.
5. ____, "Stable zirconium silicate gate dielectrics deposited directly on silicon," Appl. Phys. Lett, vol. 76, pp. 112-114, 2000.
6. 2/Si MOSFET performance," in IEDM Tech. Dig., Dec 2001, pp. 655-658.
7. 2," Appl. Phys. Lett., vol. 79, pp. 245-247, 2001.
8. S. Jeon, K. Im, H. Yang, H. Lee, H. Sim, S. Choi, T. Jang, and H. Hwang, "Excellent electrical characteristics of lanthanide (Pr, Nd, Sm, Gd, and Dy) oxide and lanthanide-doped oxide for MOS gate dielectric applications," in IEDM Tech. Dig., Dec. 2001, pp. 471-472.
9. R. A. McKee, F. J. Walker, and M. F. Chisholm, "Crystalline oxides on silicon: The first five monolayers," Phys. Rev. Lett., vol. 81, pp. 3014-3017, 1998.
10. ____, "Physical structure and inversion charge at a semiconductor interface with a crystalline oxide," Science, vol. 293, pp. 468-471, 2001.
11. 3/Si(001) heterojunctions," J. Vac. Sci. Technol, vol. 19, no. 3, pp. 934-939, 2001.
12. J. Robertson, "Band offsets of wide-band-gap oxides and implications for future electronic devices," J. Vac. Sci. Technol., vol. 18, no. 3, pp. 1785-1791, 2000.
13. K. Yang, Y. C. King, and C. Hu, "Quantum effect in oxide thickness determination from capacitance measurement," in VLSI Tech. Dig., vol. 18, 2000, pp. 77-78.
14. E. H. Nicollian and J. R. Brews, MOS Physics and Technology. New York: Wiley, 1981, ch. 5.
15. 2 high-κ gate dielectrics directly grown on Si (111)," Appl. Phys. Lett. vol. 81, no. 23, pp. 4386-4388, 2002.
16. 3 gate dielectric films," Appl. Phys. Lett., vol. 81, no. 14, pp. 2608-2610, 2002.