Improvement in the uniformity and the thermal stability of Hf-silicate gate dielectric by plasma-nitridation

Extended Abstracts of International Workshop on Gate Insulator, IWGI 2003

Volumn , Issue , 2003, Pages 42-46

  Kamiyama, S ^a   Aoyama, T ^a   Tsutsumi, Y ^a   Takada, H ^a   Horiuchi, A ^a   Maeda, T ^a   Torii, K ^a   Kitajima, H ^a   Arikado, T ^a  

^a SEMICONDUCTOR LEADING EDGE TECHNOLOGIES INC   (Japan)

Author keywords

Crystallization; Dielectrics; Hafnium; Nitrogen; Plasma materials processing; Plasma properties; Plasma stability; Plasma temperature; Rapid thermal annealing; Thermal stability

Indexed keywords

CRYSTALLIZATION; DIELECTRIC MATERIALS; GATE DIELECTRICS; HAFNIUM; NITROGEN; NITROGEN PLASMA; RAPID THERMAL ANNEALING; SILICATES; THERMODYNAMIC STABILITY;

HF CONCENTRATION; HF SILICATE; NITROGEN CONCENTRATIONS; PLASMA MATERIALS-PROCESSING; PLASMA NITRIDATION; PLASMA PROPERTIES; PLASMA TEMPERATURE;

PLASMA STABILITY;

EID: 12444320529     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IWGI.2003.159180     Document Type: Conference Paper

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