HfO2film formation combined with radical nitridation and its electrical characteristic

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 43, Issue 11 B, 2004, Pages 7821-7825

  Takahashi, Ryoya ^a   Sakashita, Mitsuo ^a,b   Sakai, Akira ^a   Zaima, Shigeaki ^a   Yasuda, Yukio ^a  

^a NAGOYA UNIVERSITY   (Japan)

^b KOCHI UNIVERSITY OF TECHNOLOGY   (Japan)

Author keywords

HfO2; High k gate dielectric; Radical nitridation; Silicon nitride

Indexed keywords

DIELECTRIC MATERIALS; GAS PERMEABLE MEMBRANES; LEAKAGE CURRENTS; MOSFET DEVICES; NITRIDING; OXIDATION; RAPID THERMAL ANNEALING; SILICON NITRIDE; THERMODYNAMIC STABILITY; X RAY PHOTOELECTRON SPECTROSCOPY;

GATE DIELECTRICS; HFO2; HIGH-K GATE DIELECTRIC; NITROGEN BONDS; RADICAL NITRIDATION; RAPID THERMAL OXIDATION;

HAFNIUM COMPOUNDS;

EID: 12844263464     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.43.7821     Document Type: Conference Paper

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