Effect of Hf sources, oxidizing agents, and NH3/Ar plasma on the properties of HfAlO3 films prepared by atomic layer deposition

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 43, Issue 7 A, 2004, Pages 4129-4134

  Kawahara, Takaaki ^a   Torii, Kazuyoshi ^a   Mitsuhashi, Riichirou ^a   Muto, Akiyoshi ^a   Horiuchi, Atsushi ^a   Ito, Hiroyuki ^a   Kitajima, Hiroshi ^a  

^a SEMICONDUCTOR LEADING EDGE TECHNOLOGIES INC   (Japan)

Author keywords

Atomic layer deposition; CMOSFETs; Gate leakage current; Gate oxide; HfAlOx; Impurities; Mobility; NH3 Ar plasma

Indexed keywords

AGENTS; ALUMINUM COMPOUNDS; CARRIER MOBILITY; DEPOSITION; GATES (TRANSISTOR); HAFNIUM COMPOUNDS; HYDROLYSIS; IMPURITIES; LEAKAGE CURRENTS; OXIDATION; TRANSMISSION ELECTRON MICROSCOPY;

ATOMIC LAYER DEPOSITION; CMOSFET; GATE LEAKAGE CURRENT; GATE OXIDE;

THIN FILMS;

EID: 4644309312     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.43.4129     Document Type: Article

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