Exciton-polariton spectra and limiting factors for the room-temperature photoluminescence efficiency in ZnO

Semiconductor Science and Technology

Volumn 20, Issue 4, 2005, Pages

  Chichibu, S F ^a,b,c   Uedono, A ^a   Tsukazaki, A ^d   Onuma, T ^c   Zamfirescu, M ^e   Ohtomo, A ^d   Kavokin, A ^e   Cantwell, G ^f   Litton, C W ^g   Sota, T ^h   Kawasaki, M ^d,i  

^a UNIVERSITY OF TSUKUBA   (Japan)

^b INST OF PHYS AND CHEMICAL RESEARCH   (Japan)

^c JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^d TOHOKU UNIVERSITY   (Japan)

^e UNIVERSITÉ BLAISE PASCAL   (France)

^f ZN Technology Inc   (United States)

^g AIR FORCE RESEARCH LABORATORY   (United States)

^h WASEDA UNIVERSITY   (Japan)

ⁱ Combinatorial Mat Explor Technol ^*  (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; ANNEALING; COHERENT LIGHT; COMPLEXATION; EXCITONS; LASERS; LIGHT REFLECTION; LIGHT SOURCES; PHOTOLUMINESCENCE; POINT DEFECTS; RESONANCE; SEMICONDUCTOR QUANTUM WELLS; ZINC;

EXCITON-POLARITON SPECTRA; RABI SPLITTING; ROOM TEMPERATURE (RT); SEMICONDUCTOR MICROCAVITIES (SMC);

ZINC OXIDE;

EID: 20144388276     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/20/4/009     Document Type: Article

References (66)

1. Hümmer K 1973 Phys. Status Solidi 56 249
2. Thomas D G 1960 J. Phys. Chem. Solids 15 86
3. Hopfield J J 1960 J. Phys. Chem. Solids 15 91
4. Reynolds D, Look D C, Jogai B, Litton C W, Cantwell G and Harsch W 1999 Phys. Rev. B 60 2340
5. Gil B 2001 Phys. Rev. B 64 201310R
6. Chichibu S F, Sota T, Cantwell G, Eason D B and Litton C W 2002 J.Appl. Phys. 93 756
7. Weisbuch C, Nishioka M, Ishikawa A and Arakawa Y 1992 Phys. Rev. Lett. 69 3314
8. Zamfirescu M, Kavokin A, Gil B, Malpuech G and Kaliteevski M 2002 Phys. Rev. B 65 161205R
9. Imamoglu A, Ram R J, Pau S and Yamamoto Y 1996 Phys. Rev. A 53 4250
10. Hummer K and Gebhardt P 1978 Phys. Status Solidi b 85 271
11. Lagois J 1981Phys. Rev.B 23 5511
12. Yu P, Tang Z. Wong G, Kawasaki M, Ohtomo A, Koinuma H and Segawa Y 1996 Proc. 23rd Int. Conf. on Physics of Semiconductors (Berlin) vol 2 ed M Scheffler and R Zimmermann (Singapore: World Scientific) p 1453
13. Yu P, Tang Z, Wong G, Kawasaki M, Ohtomo A, Koinuma H and Segawa Y 1997 Solid State Commun. 103 459
14. Ohtomo A, Kawasaki M, Sakurai Y, Yoshida Y, Koinuma H, Yu P, Tang Z, Wong G and Segawa Y 1998 Mater. Sci. Eng. 5424
15. Choopun S, Vispute R, Noch W, Balsamo A, Sharma R, Venkatesan T, Iliadis A and Look D C 1999 Appl. Phys. Lett. 75 3947
16. Joseph M, Tabata H and Kawai T 1999 Japan. J. Appl. Phys. 38 L1205
17. Cook J and Schetzina F 1996 J. Electron. Mater. 25 855
18. Bagnall D, Chen Y, Zhu Z, Yao T, Koyama S, Shen M and Goto T 1997 Appl. Phys. Lett. 70 2230 Bagnall D, Chen Y, Zhu Z, Yao T, Koyama S, Shen M and Goto T 1998 Appl. Phys. Lett. 73 1038
19. Bagnall D, Chen Y, Zhu Z, Yao T, Koyama S, Shen M and Goto T 1997 Appl. Phys. Lett. 70 2230 Bagnall D, Chen Y, Zhu Z, Yao T, Koyama S, Shen M and Goto T 1998 Appl. Phys. Lett. 73 1038
20. Iwata K, Fons P, Yamada A, Matsubara K and Niki S 2000 J. Cryst. Growth 209 526
21. Look D C, Reynolds D C, Litton C W, Jones R L, Eason D B and Gantwell G 2002 Appl. Phys. Lett. 811830
22. Minegishi K, Koiwai Y, Kikuchi Y, Yano K, Kasuga M and Shimizu A 1997 Japan. J. Appl. Phys. 36 L1453
23. Ogata K, Kawanishi T, Maejima K, Sakurai K, Fujita S and Fujita S 2001 Japan. J. Appl. Phys. 40 L657
24. Chichibu S F, Yoshida T, Onuma T and Nakanishi H 2002 J. Appl. Phys. 91 874
25. Tamura T, Makino T, Tsukazaki A, Sumiya M, Fuke S, Furumochi T, Lippmaa M, Chia C H, Segawa Y, Koinuma H and Kawasaki M 2003 Solid State Commun. 127 265
26. Strassburg M et al 2004 Phys. Status Solidi b 241 607
27. Tsukazaki A et al 2005 Nature Mater. 4 42
28. Tsukazaki A, Ohtomo A, Yoshida S, Kawasaki M, Chia C H, Makino T, Segawa Y, Koida T, Chichibu S F and Koinuma H 2003 Appl. Phys. Lett. 83 2784
29. Kohan A F, Ceder G, Morgan D and Van de Walle C G 2000 Phys. Rev. B 61 15019
30. Chichibu S F, Uedono A, Onuma T, Sota T, Haskeil B A, DenBaars S P, Speck J S and Nakamura S 2005 Appl. Phys. Lett. 86 021914
31. Koida T, Chichibu S F, Uedono A, Tsukazaki A, Kawasaki M, Sota T, Segawa Y and Koinuma H 2003 Appl. Phys. Lett. 82 532
32. For a review, see for example Krause-Rehberg R and Leipner H S 1999 Positron Annihilation in Semiconductors, Solid-State Sciences vol 127 (Berlin: Springer)
33. Coleman P G 2000 Positron Beams and their Application (Singapore: World Scientific) p 1
34. Saarinen K et al 1997 Phys. Rev. Lett. 79 3030
35. Uedono A, Chichibu S F, Chen Z Q, Sumiya M, Suzuki R, Ohdaira T, Mikado T, Mukai T and Nakamura S 2001 J. Appl. Phys. 90 181
36. Uedono A, Koida T, Tsukazaki A, Kawasaki M, Chen Z Q, Chichibu S F and Koinuma H 2003 J. Appl. Phys. 93 2481
37. van Veen A, Schul H, Clement M, de Nijs J M M, Kruseman A and Ijpma M R 1995 Appl. Surf. Sci. 85 216
38. Waltereit P, Brandt O, Trampert A, Grahn H T, Menniger J, Ramsteiner M, Reiche M and Ploog K H 2000 Nature 406 865
39. Craven M D, Lim S H, Wu F, Speck J S and DenBaars S P 2002 Appl. Phys. Lett. 81 469
40. Nakamura S and Chichibu S F (ed) 2000 Introduction to Nitride Semiconductor Blue Lasers and Light Emitting Diodes (London: Taylor and Francis)
41. Wraback M, Shen H, Liang S, Gorla C R and Lu Y 1999 Appl. Phys. Lett, 74 507
42. Koida T, Chichibu S F, Uedono A, Sola T, Tsukazaki A and Kawasaki M 2004 Appl. Phys. Lett. 84 1079
43. Chichibu S F, Tsukazaki A, Kawasaki M, Tamura K, Segawa Y, Sota T and Koinuma H 2002 Appl. Phys. Lett. 80 2860
44. Chichibu S F, Sota T, Fons P J, Iwata K, Yamada A, Matsubara K and Niki S 2002 Japan. J. Appl. Phys. 41 L935
45. Muth J, Kolbas R, Sharma A, Oktyabrsy S and Narayan J 1999 J. Appl. Phys. 85 7884
46. Makino T, Chia C, Tuan N, Segawa Y, Kawasaki M, Ohtomo A, Tamura K and Koinuma H 2000 Appl. Phys. Lett. 76 3549
47. Look D C, Reynolds D C, Sizelove J R, Jones R L, Litton C W, Cantwell G and Harsch W C 1998 Solid State Commun. 105 399
48. Chichibu S F, Okumura H, Nakamura S, Feuillet G, Azuhata T, Sota T and Yoshida S 1997 Japan. J. Appl. Phys. 36 1976
49. Cardona M 1969 Modulation Spectroscopy, Solid State Physics suppl. 11 ed S Seitz, D Turnbull and H Ehrenreich (New York: Academic)
50. Aspnes D E 1980 Handbook on Semiconductors vol 2 ed T S Moss (Amsterdam: North-Holland) p 109 chapter 4A
51. Aspnes D E 1973 Surf. Sci. 37 418
52. Gil B, Lusson A, Sallet V, Hassani S, Triboulet R and Bigenwald P 2001 Japan. J. Appl. Phys. 40 L1089
53. Thoma K, Dorner B, Duesing G and Wegener W 1974 Solid State Commun. 15 1111
54. Chichibu S F, Torii K, Deguchi T, Sota T, Setoguchi A, Nakanishi H, Azuhata T and Nakamura S 2000 Appl. Phys. Lett. 76 1576
55. Torii K, Deguchi T, Sota T, Suzuki K, Chichibu S F and Nakamura S 1999 Phys. Rev. B 60 4723
56. Mollwo E 1954 Angew. Phys. 6 257
57. Jellison G E Jr 1991 J. Appl. Phys. 69 7627
58. Smith D and Baumeister P W 1979 Appl. Opt. 18 111
59. Ghosh S, Waltereit P, Brandt O, Grahn H T and Ploog K H 2002 Phys. Rev. B 65 075202
60. Meyer B K et al 2004 Phys. Status Solidi b 241 231
61. Tomzig E and Heibig R 1976 J. Lumin. 14 403
62. Chakraborty A, Haskell B A, Speck J S, DenBaars S P, Nakamura S and Mishra U K 2004 Appl. Phys. Lett. 85 5143
63. Chichibu S F et al 1999 Appl. Phys. Lett. 74 1460
64. Nielsen B, Lymn K G, Vehanen A and Schultz P J 1985 Phys. Rev. B 32 7561
65. Uedono A, Wei L, Tabuki Y, Kondo H, Tanigawa S, Wada K and Nakanishi H 1991 Japan. J. Appl. Phys. 30 L2002
66. Sumiya M, Yoshimura K, Ohtsuka K and Fuke S 2000 Appl. Phys. Lett. 76 2098