Helicon-wave-excited-plasma sputtering epitaxy of ZnO on sapphire (0001) substrates

Journal of Applied Physics

Volumn 91, Issue 2, 2002, Pages 874-877

  Chichibu, S F ^a   Yoshida, T ^a   Onuma, T ^a   Nakanishi, H ^b  

^a UNIVERSITY OF TSUKUBA   (Japan)

^b TOKYO UNIVERSITY OF SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC STEP; EPILAYER QUALITY; NEAR BAND EDGE; OXIDE SEMICONDUCTOR; SPUTTERING GAS; ULTRA SMOOTH SURFACE; ZNO;

EPILAYERS; EPITAXIAL FILMS; HELICONS; PURIFICATION; SAPPHIRE; ZINC OXIDE;

EPITAXIAL GROWTH;

EID: 0037080893     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1426238     Document Type: Article

References (27)

1. F. Chen, Plasma Phys. Controlled Fusion 33, 339 (1991);
2. J. Vac. Sci. Technol. A 10, 1389 (1992).
3. R. Boswell, Proceedings of 21st International Conference on Phenomena in Ionised Gases, edited by G. Ecker, U. Arendt, J. Boseler, and A. Brunn (Arbeitsgemeinschaft Plasma Physik, Bochum, 1993), p. 18.
4. T. Nakano, K. Giapis, R. Gottscho, T. Lee, and N. Sadeghi, J. Vac. Sci. Technol. B 11, 2046 (1993).
5. H. Sugai, Oyo Butsuri 63, 559 (1994) (in Japanese).
6. K. Yamaya, Y. Yamaki, H. Nakanishi, and S. Chichibu, Appl. Phys. Lett. 72, 235 (1998).
7. K. Hümmer, Phys. Status Solidi 56, 249 (1973).
8. D. Reynolds, D. Look, B. Jogai, and H. Morkoc, Solid State Commun. 101, 643 (1997).
9. P. Yu, Z. Tang, G. Wong, M. Kawasaki, A. Ohtomo, H. Koinuma, and Y. Segawa, Proceeding of the 23rd International Conference on Physics of Semiconductors, Berlin, edited by M. Scheffler and R. Zimmermann (World Scientific, Singapore, 1996), Vol. 2, p. 1453;
10. Solid State Commun. 103, 459 (1997).
11. A. Ohtomo, M. Kawasaki, Y. Sakurai, Y. Yoshida, H. Koinuma, P. Yu, Z. Tang, G. Wong, and Y. Segawa, Mater. Sci. Eng., B 54, 24 (1998).
12. S. Choopun, R. Vispute, W. Noch, A. Balsamo, R. Sharma, T. Venkatesan, A. Iiadis, and D. Look, Appl. Phys. Lett. 75, 3947 (1999).
13. M. Joseph, H. Tabata, and T. Kawai, Jpn. J. Appl. Phys., Part 2 38, L1205 (1999);
14. M. Joseph, H. Tabata, H. Saeki, K. Ueda, and T. Kawai, Physica B 302-303, 140 (2001).
15. J. Cook and F. Schetzina, J. Electron. Mater. 25, 855 (1996).
16. D. Bagnall, Y. Chen, Z. Zhu, T. Yao, S. Koyama, M. Shen, and T. Goto, Appl. Phys. Lett. 70, 2230 (1997);
17. 73, 1038 (1998).
18. K. Iwata, P. Fons, A. Yamada, K. Matsubara, and S. Niki, J. Cryst. Growth 209, 526 (2000);
19. P. Fons, K. Iwata, S. Niki, A. Yamada, K. Matsubara, and M. Watanabe, 209, 532 (2000).
20. K. Minegishi, Y. Koiwai, Y. Kikuchi, K. Yano, M. Kasuga, and A. Shimizu, Jpn. J. Appl. Phys., Part 2 36, L1453 (1997).
21. K. Ogata, T. Kawanishi, K. Maejima, K. Sakurai, Sz. Fujita, and Sg. Fujita, Jpn. J. Appl. Phys., Part 2 40, L657 (2001).
22. T. Watari, Phys. Fluids 21, 2078 (1978).
23. M. Yoshimoto, T. Maeda, T. Ohnishi, H. Koinuma, O. Ishiyama, M. Shinohara, M. Kubo, R. Miura, and A. Miyamoto, Appl. Phys. Lett. 67, 2645 (1995).
24. K. Kim, J. Song, H. Jung, W. Choi, S. Park, and J. Song, J. Appl. Phys. 87, 3573 (2000).
25. D. G. Thomas, J. Phys. Chem. Solids 15, 86 (1960).
26. T. Makino, C. Chia, N. Tuan, Y. Segawa, M. Kawasaki, A. Ohtomo, K. Tamura, and H. Koinuma, Appl. Phys. Lett. 76, 3549 (2000);
27. T. Makino, T. Yasuda, Y. Segawa, A. Ohtomo, K. Tamura, M. Kawasaki, and H. Koinuma, 79, 1282 (2001).