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Japanese Journal of Applied Physics, Part 2: Letters

Volumn 40, Issue 10 B, 2001, Pages

Strain-fields effects and reversal of the nature of the fundamental valence band of ZnO epilayers

(6) Gil, Bernard a Lusson, Alain b Sallet, Vincent b Said Hassani, Said Assoumani b Triboulet, Robert b Bigenwald, Pierre c

a UNIV MONTPELLIER (France)

b CNRS (France)

c UNIVERSITY OF AVIGNON (France)

Author keywords

Band structure effects; Excitons; Strain; Widebandgap semiconductors

Indexed keywords

BAND STRUCTURE; GALLIUM NITRIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; STRAIN; X RAY DIFFRACTION ANALYSIS;

EPILAYERS; STRAIN FIELDS EFFECTS; VALENCE BAND;

ZINC OXIDE;

EID: 0035888711 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.40.l1089 Document Type: Letter

Times cited : (57)

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