High temperature characteristics of Pd Schottky contacts on n-type GaN

Electronics Letters

Volumn 32, Issue 19, 1996, Pages 1832-1833

  Schmitz, A C ^a   Ping, A T ^a   Asif Khan, M ^b   Chen, Q ^b   Yang, J W ^b   Adesida, I ^a  

^a University of Illinois at Urbana Champaign   (United States)

^b APA Optronics   (United States)

Author keywords

Gallium nitride; Schottky barriers

Indexed keywords

ANNEALING; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CONTACTS; FIELD EFFECT TRANSISTORS; HIGH TEMPERATURE OPERATIONS; PALLADIUM; SEMICONDUCTING GALLIUM COMPOUNDS;

GALLIUM NITRIDE; SCHOTTKY CONTACTS;

SCHOTTKY BARRIER DIODES;

EID: 3242869524     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19961191     Document Type: Article

References (8)

1. NAKAMURA, S., SENOH, M., NAGAHAMA, S., IWASA, N., YAMADA, T., MATSUSHITA, T., KIYOKU, H., and SUGIMOTO, Y.: 'InGaN-based multiquantum-well-structure laser diode', Jpn. J. Appl. Phys., 1996, 35, pp. L74-L76
2. KHAN, M.A., SHUR, M.S., KUZNIA, J.N., CHEN, Q., BURM, J., and SCHAFF, W.: 'Temperature activated conductance in GaN/AlGaN heterostructure field effect transistors operating at temperatures up to 300°C', Appl. Phys. Lett., 1995, 66, (9), pp. 1083-1085
3. PANKOVE, J., CHANG, S.S., LEE, H.C., MOLNAR, R.J., MOUSTAKAS, T.D., and ZEGHBROECK, B.V.: 'High temperature GaN/SiC heterojunction bipolar transistor with high gain', IEDM Proc., 1994, pp. 389-391
4. HACKE, P., DETCHPROHM, T., HIRAMATSU, K., and SAWAKI, N.: 'Schottky barrier on n-type GaN grown by hydride vapor phase epitaxy', Appl. Phys. Lett., 1993, 63, (19), pp. 2676-2678
5. GUO, J.D., FENG, M.S., GUO, R.J., PAN, F.M., and CHANG, C.Y.: 'Study of Schotiky barrier on n-type GaN grown by low-pressure metalorganic chemical vapor deposition', Appl. Phys. Lett., 1995, 67, (18), pp. 2657-2659
6. PING, A.T., SCHMITZ, A.C., KHAN, M.A., and ADESIDA, I.: 'Characteristics of Pd Schottky diodes on n-type GaN', Electron. Lett., 1996, 32, pp. 68-70
7. KALININA, E.V., KUZNETSOV, N.I., DMITRIEV, V.A., IRVINE, K.G., and CARTER, C.H., Jr.: 'Schottky barriers on n-GaN grown on SiC', J. Electron. Mater., 1996, 25, pp. 831-834
8. SCHRODER, D.K.: 'Semiconductor material and device characterisation' (John Wiley & Sons, New York, 1990), pp. 153-154