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Volumn 93, Issue 2, 2003, Pages 871-877

Vacancy and interstitial depth profiles in ion-implanted silicon

Author keywords

[No Author keywords available]

Indexed keywords

DOPING (ADDITIVES); ION IMPLANTATION; IONS; SILICON;

EID: 0037439457     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1528304     Document Type: Article
Times cited : (27)

References (32)
  • 12
    • 0000235265 scopus 로고
    • J. P. Biersack and L. G. Haggmark, Nucl. Instrum. Methods 174, 257 (1980); J. F. Ziegler, J. P. Biersack, and U. Littmark, in The Stopping and Range of Ions in Solids, edited by J. F. Ziegler (Pergamon, New York, 1985), Vol. 1.
    • (1980) Nucl. Instrum. Methods , vol.174 , pp. 257
    • Biersack, J.P.1    Haggmark, L.G.2
  • 19
    • 36149009491 scopus 로고
    • G. D. Watkins and J. W. Corbett, Phys. Rev. 121, 1001 (1961); J. W. Corbett, G. D. Watkins, R. M. Chrenko, and R. S. McDonald, ibid. 121, 1015 (1961).
    • (1961) Phys. Rev. , vol.121 , pp. 1001
    • Watkins, G.D.1    Corbett, J.W.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.