Interaction of hydrogen with the vacancy-oxygen pair produced in n-type silicon by electron irradiation

Semiconductor Science and Technology

Volumn 15, Issue 2, 2000, Pages 126-129

  Tokuda, Yutaka ^a   Seki, Takeshi ^a  

^a AICHI INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRON IRRADIATION; HYDROGEN;

VACANCY-OXYGEN PAIRS;

SEMICONDUCTING SILICON;

EID: 0033873941     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/15/2/308     Document Type: Article

References (16)

1. Kimerling L C 1977 Radiat. Eff. Semicond. (Inst. Phys. Conf. Ser. 31) (Bristol: Institute of Physics) p 221
2. Phankove J I and Johnson N M 1991 Semiconductor and Semimetals vol 34 (New York: Academic) p 85
3. Pearton S J, Corbett W and Stavola M 1992 Hydrogen in Crystalline Semiconductors (Berlin: Springer) pp 49, 175
4. Qun G G, Du Y C and Yao X C 1986 Defects Semicond. II 10-12 563
5. Endrös A, Krühler W and Grabmaier J 1989 Mater. Sci. Eng. B 4 35
6. de Mierry P, Ballutaud D and Grabmaier 1990 J. Electrochem. Soc. 137 2966
7. Yoneta M, Kamiura Y and Hashimoto F 1991 J. Appl. Phys. 70 1295
8. Kamiura Y, Hayashi M, Nishiyama, Ohyama S and Yamashita Y 1997 Japan. J. Appl. Phys. 36 6579
9. Svensson B G, Hallén A and Sundqvist B U R 1989 Mater. Sci. Eng. B 4 285
10. Hallén A, Sundqvist B U R, Paska Z, Svensson B G, Rosling M and Tirén J 1990 J. Appl. Phys. 67 1266
11. Palmetshofer L and Reisinger J 1992 J. Appl. Phys. 72 2167
12. Tokuda Y, Ito A and Ohshima H 1997 (Inst. Phys. Conf. Ser. 160) (Bristol: Institute of Physics) p 305
13. Feklisova O V and Yarykin N A 1997 Semicond. Sci. Technol. 12 742
14. Tokuda Y 1998 Japan. J. Appl. Phys. 37 1815
15. Lang D V 1974 J. Appl. Phys. 45 3023
16. Tokuda Y, Shimizu N and Usami A 1979 Japan. J. Appl. Phys. 18 309