-
4
-
-
0032204363
-
ESD protection for high frequency integrated circuits
-
G. Groph, and J. Bernier ESD protection for high frequency integrated circuits Solid State Electron 38 1998 1681 1689
-
(1998)
Solid State Electron
, vol.38
, pp. 1681-1689
-
-
Groph, G.1
Bernier, J.2
-
6
-
-
0030129156
-
Negative differential conductivity and isothermal drain breakdown of the GaAs MESFET
-
V.A. Vashchenko Negative differential conductivity and isothermal drain breakdown of the GaAs MESFET IEEE Trans Electron Dev ED-43 4 1996 513 518
-
(1996)
IEEE Trans Electron Dev
, vol.ED-43
, Issue.4
, pp. 513-518
-
-
Vashchenko, V.A.1
-
7
-
-
0002140154
-
Using SCRs as transient protection structures in integrated circuits
-
Avery L. Using SCRs as transient protection structures in integrated circuits, ESD Symp, 1983, p. 27-9
-
(1983)
ESD Symp
, pp. 27-29
-
-
Avery, L.1
-
8
-
-
0029536334
-
Bipolar SCR ESD protection for high speed submicron bipolar/BiCMOS circuita frequency integrated circuits
-
J.Z. Chen, A. Amerasekera, and T. Vrotos Bipolar SCR ESD protection for high speed submicron bipolar/BiCMOS circuita frequency integrated circuits IEDM 1995 337 340
-
(1995)
IEDM
, pp. 337-340
-
-
Chen, J.Z.1
Amerasekera, A.2
Vrotos, T.3
-
9
-
-
0034159376
-
Cascoded LVTSCR with tunable-holding voltage for ESD protection in bulk CMOS technology without latchup danger
-
M.D. Ker, and H. Chang Cascoded LVTSCR with tunable-holding voltage for ESD protection in bulk CMOS technology without latchup danger Solid State Electron 44 2000 425 445
-
(2000)
Solid State Electron
, vol.44
, pp. 425-445
-
-
Ker, M.D.1
Chang, H.2
-
10
-
-
84948982831
-
GGSCRs: GGNMOS triggered silicon controlled rectifiers for ESD protection in deep sub-micron CMOS process
-
Russ C, Mergens M, Verhaege K, Armer J, Jozwiak P, Kolluri G. GGSCRs: GGNMOS triggered silicon controlled rectifiers for ESD protection in deep sub-micron CMOS process. In: Proceedings of ESD/EOS Symposium. 2001. p. 22-31
-
(2001)
Proceedings of ESD/EOS Symposium
, pp. 22-31
-
-
Russ, C.1
Mergens, M.2
Verhaege, K.3
Armer, J.4
Jozwiak, P.5
Kolluri, G.6
-
11
-
-
84875290566
-
High holding current SCRs (HHI-SCR) for ESD protection and latch-up immune IC operation
-
Mergens M, Russ C, Verhaege K, Armer J, Jozwiak P, Mohn R. High holding current SCRs (HHI-SCR) for ESD protection and latch-up immune IC operation. In: Proceedings of ESD/EOS Symposium, 2002. p. 11-7
-
(2002)
Proceedings of ESD/EOS Symposium
, pp. 11-17
-
-
Mergens, M.1
Russ, C.2
Verhaege, K.3
Armer, J.4
Jozwiak, P.5
Mohn, R.6
-
13
-
-
0034448113
-
SCR-LDMOS-a novel LDMOS device with ESD robustness
-
S. Pendharkar, R. Teggatz, J. Devore, J. Carpenter, T. Efland, and C.-Y. Tsai SCR-LDMOS-a novel LDMOS device with ESD robustness ISPSD 2000 341 344
-
(2000)
ISPSD
, pp. 341-344
-
-
Pendharkar, S.1
Teggatz, R.2
Devore, J.3
Carpenter, J.4
Efland, T.5
Tsai, C.-Y.6
-
15
-
-
0036437982
-
Comparison of ESD protection capability of lateral BJT, SCR and bi-directional SCR for Hi-voltage BiCMOS circuits
-
Vashchenko VA, Concannon A, ter Beek M, Hopper P. Comparison of ESD protection capability of lateral BJT, SCR and bi-directional SCR for Hi-voltage BiCMOS circuits. In: Proceedings of the BCTM, 2002. p. 181-4
-
(2002)
Proceedings of the BCTM
, pp. 181-184
-
-
Vashchenko, V.A.1
Concannon, A.2
Ter Beek, M.3
Hopper, P.4
-
16
-
-
17044368807
-
ESD protection of the high voltage tolerant pins in low-voltage BiCMOS processes
-
Vashchenko VA, ter Beek M, Kindt W, Hopper P. ESD protection of the high voltage tolerant pins in low-voltage BiCMOS processes. In: Proceedings of BCTM, 2004. p. 277-80
-
(2004)
Proceedings of BCTM
, pp. 277-280
-
-
Vashchenko, V.A.1
Ter Beek, M.2
Kindt, W.3
Hopper, P.4
-
17
-
-
4944265277
-
Implementation of 60 V tolerant dual direction ESD protection in 5 V BiCMOS process for automotive application
-
Vashchenko VA, Kindt W, ter Beek M, Hopper P. Implementation of 60 V tolerant dual direction ESD protection in 5 V BiCMOS process for automotive application. In: Proceedings of ESD/EOS Symposium, 2004. p. 117-24
-
(2004)
Proceedings of ESD/EOS Symposium
, pp. 117-124
-
-
Vashchenko, V.A.1
Kindt, W.2
Ter Beek, M.3
Hopper, P.4
-
18
-
-
3042652835
-
Bipolar SCR ESD protection in a 0.25 μm Si-Ge process using sub-collector region modification
-
Vashchenko VA, Concannon A, ter Beek M, Hopper P. Bipolar SCR ESD protection in a 0.25 μm Si-Ge process using sub-collector region modification, Proceed. 1RPS, 2004. p. 469-73
-
(2004)
Proceed. 1RPS
, pp. 469-473
-
-
Vashchenko, V.A.1
Concannon, A.2
Ter Beek, M.3
Hopper, P.4
-
21
-
-
84948734726
-
Variable-trigger voltage ESD power clamps for mixed voltage applications using a 120 GHz/100 GHz (fT/fmax) silicon germanium hetero junction bipolar transistor with carbon incorporation
-
Voldman S. Variable-trigger voltage ESD power clamps for mixed voltage applications using a 120 GHz/100 GHz (fT/fmax) silicon germanium hetero junction bipolar transistor with carbon incorporation. In: Proceedings of the ESD/EOS Symposium, 2002. p. 52-61
-
(2002)
Proceedings of the ESD/EOS Symposium
, pp. 52-61
-
-
Voldman, S.1
-
22
-
-
0035158795
-
Voltage handling capability and termination techniques of silicon power semiconductor devices
-
G. Charitat Voltage handling capability and termination techniques of silicon power semiconductor devices IEEE BCTM 2001 175 183
-
(2001)
IEEE BCTM
, pp. 175-183
-
-
Charitat, G.1
-
23
-
-
15744399439
-
-
HBM MIL883-STD3015
-
HBM MIL883-STD3015
-
-
-
-
24
-
-
15744385156
-
-
Workshop. Session on HBM-TLP correlation
-
ESD/EOS Symposium. Workshop. Session on HBM-TLP correlation, 2004
-
(2004)
ESD/EOS Symposium
-
-
-
25
-
-
4043078500
-
High holding voltage cascoded LVTSCR structures for 5.5 V tolerant ESD protection clamps
-
V.A. Vashchenko, A. Concannon, M. ter Beek, and P. Hopper High holding voltage cascoded LVTSCR structures for 5.5 V tolerant ESD protection clamps IEEE Trans Dev Mat Reliab 4 N2 2004 273 280
-
(2004)
IEEE Trans Dev Mat Reliab
, vol.4
, Issue.2
, pp. 273-280
-
-
Vashchenko, V.A.1
Concannon, A.2
Ter Beek, M.3
Hopper, P.4
|