ESD protection of double-diffusion devices in submicron CMOS processes

ESSCIRC 2004 - Proceedings of the 34th European Solid-State Device Research Conference

Volumn , Issue , 2004, Pages 261-264

  Concannon, Ann ^a   Vashchenko, V A ^a   Hopper, P ^a   Ter Beek, M ^a  

^a NATIONAL SEMICONDUCTOR CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DOUBLE DIFFUSION DEVICES; ELECTROSTATIC DISCHARGE (ESD) EFFECTS; HIGH VOLTAGE TOLERANCE; OPERATING VOLTAGE;

AVALANCHE DIODES; COMPUTER AIDED DESIGN; COMPUTER SIMULATION; ELECTRIC BREAKDOWN; ELECTRIC DISCHARGES; ELECTROSTATICS; SEMICONDUCTOR JUNCTIONS; THRESHOLD VOLTAGE;

CMOS INTEGRATED CIRCUITS;

EID: 15744381102     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)

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3. A. Amerasekera and C. Duvvury "ESD in Integrated Circuits", Wiley 1995. p56-63
4. V. A. Vashchenko, A. Concannon, M. ter Beek, and P. Hopper "Comparison of BSD Protection Capability of lateral BJT, SCR and bi-directional SCR for Hi-Voltage BiCMOS Circuits", in Proceed. of BCTM, 2002, pp. 181-184.
5. V. A. Vashchenko, A. Concannon, M. ter Beek, and P. Hopper "Bipolar SCR BSD Protection in a 0.25 μm Si-Ge Process Using Sub-Collector Region Modification", in print Proceed. IRPS. 2004, paper 8B4. in print
6. "TSUPREME4", "MEDICI", Versions 2003.12.0. Reference Manual, Synopsys, 2003.