Bipolar SCR ESD protection in a 0.25 μM Si-Ge process using sub-collector region modification

Annual Proceedings - Reliability Physics (Symposium)

Volumn , Issue , 2004, Pages 469-473

  Vashchenko, V A ^a   Concannon, A ^a   Ter Beek, M ^a   Hopper, P ^a  

^a NATIONAL SEMICONDUCTOR CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BIPOLAR SCR (BSCR); INJECTION CONDUCTIVITY; N-BURIED LAYER (NBL);

COMPUTER AIDED DESIGN; COMPUTER SIMULATION; GERMANIUM; MODULATION; THYRISTORS; VOLTAGE MEASUREMENT;

SILICON;

EID: 3042652835     PISSN: 00999512     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)

1. J. Z. Chen, A. Amerasekera, T. Vrotsos, "Bipolar SCR ESD protection circuit for high speed submicron bipolar/BiCMOS circuits" in Proceedings of the IEDM, 1995, p 337-340.
2. S. Joshi, R. Ida, and E. Rosenbaum "A study of vertical SiGe thyristor design and optimization," in Proceedings of the ESD/EOS Symposium 2003, pp. 224-232.
3. V. A. Vashchenko, A. Concannon, M. ter Beek, and P. Hopper "Comparison of ESD Protection Capability of lateral BJT, SCR and bi-directional SCR for Hi-Voltage BiCMOS Circuits", in Proceedings of the BCTM, 2002, pp. 181-184.
4. V.A. Vashchenko, A. Concannon, M. ter Beek, and P. Hopper "High performance SCR's for on-chip ESD Protection in High Voltage BCD Processes" in Proceedings of the ISPSD, 2003 pp.261-264.
5. V.A. Vashchenko, A. Concannon, M. ter Beek, and P. Hopper "Stacked BSCR ESD Protection for 250V tolerant circuit" to be published in Proceedings of the ISPSD, 2004, May25, paper#114.
6. S. Voldman, "Variable-trigger voltage ESD power clamps for mixed voltage applications using a 120GHz/100GHz (fT/fmax) silicon germanium heterojunction bipolar transistor with carbon incorporation," in Proceedings of the ESD/EOS Symposium, 2002, pp.52-61.
7. "TSUPREME4", "MEDICI", Versions 2003.12.0. Reference Manual, Synopsys, 2003.
8. S.H. Voldman, "The effect of deep trench isolation, trench isolation and sub-collector doping on the electrostatic discharge (ESD) robustness of readion frequency (RF) ESD STI-bound p+/Nwell diodes in BiCMOS silicon germanium technology, in Proceedings of the ESD/EOS Symposium, 2003, pp.214-223