High performance SCR's for on-chip ESD protection in high voltage BCD processes

IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD)

Volumn , Issue , 2003, Pages 261-264

  Vashchenko, V A ^a   Concannon, A ^a   Ter Beek, M ^a   Hopper, P ^a  

^a NATIONAL SEMICONDUCTOR CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; COMPUTER SIMULATION; ELECTRIC POTENTIAL; MODULATION;

N-BURIED LAYER (NBL);

BIPOLAR SEMICONDUCTOR DEVICES;

EID: 0043016319     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)

1. Charitat, "Voltage Handling Capability and Termination Techniques of Silicon Power Semiconductor Devices, BCTM (2001), p.175-183
2. V. A. Vashchenko, A. Concannon, M. ter Beek, and P. Hopper "Comparison of ESD Protection Capability of lateral BJT, SCR and bi-directional SCR for Hi-Voltage BiCMOS Circuits", in Proc. BCTM, 2002, pp. 181-184.
3. A. Concannon, V.A. Vashchenko, M. ter Beek, and P. Hopper, "A device level negative feedback in the emitter line of SCR-structures as a method to realize latch-up free ESD Protection," in Proceed. of IRPS, 2003,(see paper 2C.5)
4. V. A. Vashchenko, A. Concannon, M. ter Beek, and P. Hopper "Technology CAD Evaluation of BiCMOS Protection Structures Operation Including Spatial Thermal Runaway,"in Proceed. of ESD/EOS Symposium, 2002, pp.101-110.
5. J. Z. Chen, A. Amerasekera, T. Vrotos, "Bipolar SCR ESD protection for high speed submicron Bipolar/BiCMOS frequency integrated circuits," in Proceed. IEDM, (1995), pp.337-340
6. "TSUPREME4", "MEDICI, Version 2002.4.0. Synopsys, 2002.
7. V. A. Vashchenko, Y. Martynov, V.F. Sinkevitch, "Electrical instability and filamentation in ggMOS protection structures," Sol-St. Elec. (1997) p.1761.
8. V. De Heyn, N. M. Iyer, G. Groeseneken, K. Reynders, P. Moens "Effect of n+Sinker in Self-Triggering Bipolar ESD Protection Structures,"in Proceed. of ESD/EOS Symp., (2002), pp.274-280.