SCR-LDMOS - a novel LDMOS device with ESD robustness

IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD)

Volumn , Issue , 2000, Pages 341-344

  Pendharkar, S ^a   Teggatz, R ^a   Devore, J ^a   Carpenter, J ^a   Efland, T ^a   Tsai, C ^a  

^a TEXAS INSTRUMENTS   (United States)

Author keywords

ESD; Inductive switching; LDMOS; Robustness; SCR; SCR LDMOS; SCRLDMOS; SOA

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC BREAKDOWN; ELECTRIC DISCHARGES; ELECTRIC FIELDS; INTEGRATED CIRCUIT LAYOUT; INTEGRATED CIRCUIT MANUFACTURE; OXIDES; POWER ELECTRONICS; SEMICONDUCTOR DEVICE STRUCTURES;

BLOCKING VOLTAGE; ELECTROSTATIC DISCHARGE; LDMOS DEVICE; POWER DEVICE STRUCTURE;

MOS DEVICES;

EID: 0034448113     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)