A study of vertical SiGe thyristor design and optimization

Electrical Overstress/Electrostatic Discharge Symposium Proceedings

Volumn 2003-January, Issue , 2003, Pages

  Joshi, Sopan ^a,c   Ida, Richard ^b   Rosenbaum, Elyse ^a  

^a University of Illinois at Urbana Champaign   (United States)

^b MOTOROLA INC   (United States)

^c INTEL CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANODES; SCATTERING PARAMETERS; THYRISTORS;

ANODE MATERIAL; AREA SCALING; CONTACT GEOMETRY; DESIGN AND OPTIMIZATION; ESD PROTECTION; RF CHARACTERIZATION; RF INTEGRATED CIRCUITS; S-PARAMETER DATA;

SILICON ALLOYS;

EID: 84945206082     PISSN: 07395159     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (20)

1. L. Avery, "Using SCRs as transient protection structures in integrated circuits," in Proc. EOS/ESD Symp., 1983, pp. 177-180.
2. A. Chatterjee and T. Polgreen, "A low-voltage triggering SCR for on-chip ESD protection at output and input pads," IEEE EDL, vol. 12, pp. 21-22, Jan. 1991.
3. C. Russ et al., "GGSCRs: GGNMOS triggered silicon controlled rectifiers for ESD protection in deep sub-micron CMOS processes," in Proc. EOS/ESD Symp., 2001, pp. 22-31.
4. P. Juliano and E. Rosenbaum, "A novel SCR macromodel for ESD circuit simulation," in IEDM Tech. Dig., 2001, pp. 319-322.
5. J. Wu, P. Juliano and E. Rosenbaum, "Breakdown and latent damage of ultra-thin gate oxides under ESD stress conditions," Micro. Rel. J., vol. 41, pp. 1771-1779, Nov. 2001.
6. J. Chen, A. Amerasekera and T. Vrotsos, "Bipolar SCR ESD protection circuit for high speed submicron bipolar/BiCMOS circuits," in IEDM Tech. Dig., 1995, pp. 337-340.
7. H. Kroemer, "Two integral relations pertaining to the electron transport through a bipolar transistor with a nonuniform energy gap in the base region," Solid-State Elec., vol. 28, pp. 1101-1103, Nov. 1985.
8. S. H. Voldman et al., "Electrostatic discharge characterization of epitaxial-base silicongermanium heterojunction bipolar transistors," in Proc. EOS/ESD Symp., 2000, pp. 239-250.
9. F. K. Chai et al., "A cost-effective 0.25 ?m Leff BiCMOS technology featuring graded-channel CMOS (GCMOS) and a quasi-self-aligned (QSA) NPN for RF wireless applications," in Proc. IEEE BCTM, 2000, pp. 110-113.
10. D. L. Harame et al., "Si/SiGe epitaxial base transistors-Part I: Materials, physics, and circuits," IEEE Trans. ED, vol. 42, pp. 455-468, Mar. 1995.
11. Ibid, "Si/SiGe epitaxial base transistors-Part II: Process integration and analog applications," pp. 469-482.
12. C. T. Kirk, "A theory of transistor cutoff frequency (fT) fall-off at high current density," IRE Trans. ED, vol. 9, pp. 164-174, Mar. 1962.
13. T. J. Maloney and N. Khuruna, "Transmission line pulsing technique for circuit modeling of ESD phenomena," in Proc. EOS/ESD Symp., 1985, pp. 49-54.
14. S. Joshi and E. Rosenbaum, "Transmission line pulsed waveform shaping with microwave filters," in Proc. EOS/ESD Symp., 2003, p. 47-1
15. S. Joshi, R. Ida, P. Givelin and E. Rosenbaum, "An analysis of bipolar breakdown and its application to the design of ESD protection circuits," in Proc. IEEE IRPS, 2001, pp. 240-245.
16. J. Kirchgessner et al., "A 0.18 ?m SiGe:C RFBiCMOS technology for wireless and gigabit optical communication applications," in Proc. IEEE BCTM, 2001, pp. 151-154.
17. D. L. Harame et al., "Current status and future trends of SiGe BiCMOS technology," IEEE Trans. ED, vol. 48, pp. 2575-2594, Nov. 2001.
18. S. Joshi, "On the design of electrostatic discharge protection circuits for BiCMOS process technology," M.S. thesis, Univ. of Illinois at Urbana-Champaign, 2000.
19. S. Hyvonen, S. Joshi and E. Rosenbaum, "Cancellation technique to provide ESD protection for multi-GHz RF inputs," Elec. Lett., vol. 39, no. 3, pp. 284-286, 6th Feb. 2003.
20. P. J. van Wijnen, H. R. Claessen and E. A. Wolsheimer, "A new straightforward calibration and correction procedure for 'on wafer' high-frequency s-parameter measurements (45 MHz-18 GHz)," in Proc. IEEE BCTM, 1987, pp. 70-73.