High holding voltage cascoded LVTSCR structures for 5.5-V tolerant ESD protection clamps

IEEE Transactions on Device and Materials Reliability

Volumn 4, Issue 2, 2004, Pages 273-280

  Vashchenko, Vladislav A ^a   Concannon, Ann ^a   Ter Beek, Marcel ^a   Hopper, Peter ^a  

^a NATIONAL SEMICONDUCTOR CORPORATION   (United States)

Author keywords

Breakdown; ESD protection; LVTSCR; Power clamp; Snapback

Indexed keywords

CAPACITANCE; CLAMPING DEVICES; COMPUTER SIMULATION; ELECTRIC BREAKDOWN; ELECTRIC FIELDS; POWER SUPPLY CIRCUITS; RELIABILITY; SILICON; THYRISTORS;

ESD PROTECTION; LVTSCR; POWER CLAMP; SNAPBACK;

ELECTROSTATIC DEVICES;

EID: 4043078500     PISSN: 15304388     EISSN: None     Source Type: Journal    
DOI: 10.1109/TDMR.2004.826584     Document Type: Article

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