Buffer-layer-free growth of high-quality epitaxial GaN films on 4H-SiC substrate by metal-organic chemical vapor deposition

Journal of Crystal Growth

Volumn 276, Issue 3-4, 2005, Pages 407-414

  Kyeong Jeong, Jae ^a   Choi, Jung Hae ^a   Jin Kim, Hyun ^a   Seo, Hui Chan ^a   Kim, Hee Jin ^a   Yoon, Euijoon ^a   Hwang, Cheol Seong ^a   Kim, Hyeong Joon ^a  

^a Seoul National University   (South Korea)

Author keywords

A1. Growth models; A3. Metalorganic vapor phase epitaxy; B1. Gallium compounds

Indexed keywords

AMMONIA; GALLIUM NITRIDE; LIGHT EMITTING DIODES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; METALLORGANIC VAPOR PHASE EPITAXY; PHOTODETECTORS; PRESSURE EFFECTS; SEMICONDUCTING FILMS; SILICON CARBIDE; SUBSTRATES; THERMAL CONDUCTIVITY;

GROWTH MODELS; GROWTH RATES; LATTICE MISMATCH; REACTOR PRESSURE;

FILM GROWTH;

EID: 15444373012     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.12.002     Document Type: Article

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