Growth of GaN films on porous SiC substrate by molecular-beam epitaxy

Applied Physics Letters

Volumn 81, Issue 22, 2002, Pages 4142-4144

  Yun, F ^a   Reshchikov, M A ^a   He, L ^a   Morkoc H ^a   Inoki, C K ^b   Kuan, T S ^b  

^a Virginia Commonwealth University   (United States)

^b STATE UNIVERSITY OF NEW YORK   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

FILM GROWTH; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; POROUS MATERIALS; RELAXATION PROCESSES; SILICON CARBIDE; X RAY DIFFRACTION ANALYSIS;

THERMAL RELAXATION;

GALLIUM NITRIDE;

EID: 0037175956     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1524304     Document Type: Article

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