Improvement in the Crystalline Quality of Epitaxial GaN Films Grown by MOCVD by Adopting Porous 4H-SiC Substrate

Electrochemical and Solid-State Letters

Volumn 7, Issue 4, 2004, Pages

  Jeong, Jae Kyeong ^a   Kim, Hyun Jin ^a   Seo, Hui Chan ^a   Kim, Hee Jin ^a   Yoon, Euijoon ^a   Hwang, Cheol Seong ^a   Kim, Hyeong Joon ^a  

^a Seoul National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; CRYSTALLINE MATERIALS; DIFFRACTOMETERS; DISLOCATIONS (CRYSTALS); ELECTRIC BREAKDOWN; EPITAXIAL GROWTH; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; SAMPLING; SEMICONDUCTING GALLIUM COMPOUNDS; THIN FILMS; X RAY DIFFRACTION;

CRYSTALLINE QUALITY; SYMMETRIC DIFFRACTION GEOMETRY;

SILICON CARBIDE;

EID: 1842425425     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1647996     Document Type: Article

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