Vacancy-type defects in Si-doped InN grown by plasma-assisted molecular-beam epitaxy probed using monoenergetic positron beams

Journal of Applied Physics

Volumn 97, Issue 4, 2005, Pages

  Uedono, A ^a,d   Chichibu, S F ^a,e   Higashiwaki, M ^b   Matsui, T ^a,b   Ohdaira, T ^c   Suzuki, R ^c  

^a UNIVERSITY OF TSUKUBA   (Japan)

^b NATIONAL INSTITUTE OF INFORMATION AND COMMUNICATIONS TECHNOLOGY   (Japan)

^c NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^d NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^e JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

INDIUM NITRIDE (INN); PLASMA-ASSISTED MOLECULAR-BEAM EPITAXY; POSITRON BEAMS; VACANCY-TYPE DEFECTS;

ATOMIC FORCE MICROSCOPY; DOPING (ADDITIVES); FIELD EFFECT SEMICONDUCTOR DEVICES; GAMMA RAYS; INDIUM COMPOUNDS; LIGHT EMITTING DIODES; MOLECULAR BEAM EPITAXY; PARTICLE BEAMS; PHOTOLUMINESCENCE; POSITRONS; SAPPHIRE; SILICON; TRANSMISSION ELECTRON MICROSCOPY;

DEFECTS;

EID: 13744253600     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1845575     Document Type: Article

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