Oxygen-related defects introduced by As+-implantation through cap layers in Si probed by monoenergetic positron beams

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 39, Issue 11, 2000, Pages 6126-6129

  Uedono, Akira ^a   Muramatsu, Makoto ^a   Ubukata, Tomohiro ^a   Tanino, Hirotoshi ^a   Tanigawa, Shoichiro ^a   Nakano, Akihiko ^b   Yamamoto, Hidekazu ^b   Suzuki, Ryoichi ^c   Ohdaira, Toshiyuki ^c   Mikado, Tomohisa ^b  

^a UNIVERSITY OF TSUKUBA   (Japan)

^b Semiconduct Technol Acad Res C   (Japan)

^c ELECTROTECHNICAL LABORATORY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ARSENIC; CRYSTAL DEFECTS; DOPPLER EFFECT; ION IMPLANTATION; OXYGEN; POSITRONS;

CAP LAYERS; MONOENERGETIC POSITRON BEAMS;

SILICON;

EID: 0034318706     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.39.6126     Document Type: Article

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