Influence of dielectric breakdown on MOSFET drain current

IEEE Transactions on Electron Devices

Volumn 52, Issue 2, 2005, Pages 211-213

  Cellere, Giorgio ^a   Paccagnella, Alessandro ^a   Mazzocchi, Andrea ^a   Valentini, M G ^b  

^a UNIVERSITY OF PADOVA   (Italy)

^b STMICROELECTRONICS   (Italy)

Author keywords

Breakdown; Gate oxide; MOSFET

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; DIELECTRIC MATERIALS; ELECTRIC BREAKDOWN; ELECTRIC CURRENTS; PROBABILITY DISTRIBUTIONS; TRANSCONDUCTANCE; WEIBULL DISTRIBUTION;

DIELECTRIC BREAKDOWN; DRAIN CURRENT; GATE OXIDE;

MOSFET DEVICES;

EID: 13444291995     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2004.842711     Document Type: Article

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