Collapse of MOSFET Drain Current After Soft Breakdown

IEEE Transactions on Device and Materials Reliability

Volumn 4, Issue 1, 2004, Pages 63-72

  Cester, Andrea ^a   Paccagnella, Alessandro ^a   Ghidini, Gabriella ^b   Deleonibus, Simon ^c   Guegan, Georges ^c  

^a UNIVERSITY OF PADOVA   (Italy)

^b STMICROELECTRONICS   (Italy)

^c CEA LETI   (France)

Author keywords

Ionizing radiation; MOSFET failure; MOSFET reliability; Oxide reliability; Soft breakdown

Indexed keywords

CAPACITORS; DEGRADATION; ELECTRIC BREAKDOWN; ION BOMBARDMENT; LEAKAGE CURRENTS; TRANSCONDUCTANCE;

MOSFET FAILURE; MOSFET RELIABILITY; OXIDE RELIABILITY; SOFT BREAKDOWN;

MOSFET DEVICES;

EID: 2342516744     PISSN: 15304388     EISSN: None     Source Type: Journal    
DOI: 10.1109/TDMR.2003.820296     Document Type: Conference Paper

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