Soft breakdown at all positions along the N-MOSFET

Microelectronic Engineering

Volumn 59, Issue 1-4, 2001, Pages 17-23

  Weir, B E ^a   Alam, M A ^a   Silverman, P J ^a  

^a AGERE SYSTEMS   (United States)

Author keywords

Gate dielectric; Oxide reliability; Percolation path; Soft breakdown

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; DIELECTRIC MATERIALS; ELECTRIC BREAKDOWN OF SOLIDS; ELECTRIC CONDUCTIVITY; ELECTRIC CURRENTS; GATES (TRANSISTOR); THRESHOLD VOLTAGE;

SOFT BREAKDOWN;

MOSFET DEVICES;

EID: 0035498765     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(01)00626-8     Document Type: Conference Paper

References (9)