Statistical model for stress-induced leakage current and pre-breakdown current jumps in ultra-thin oxide layers

Technical Digest-International Electron Devices Meeting

Volumn , Issue , 2001, Pages 121-124

  Degraeve, R ^a   Kaczer, B ^a   Schuler, F ^b   Lorenzini, M ^a   Wellekens, D ^a   Hendrickx, P ^a   Van Houdt, J ^a   Haspeslagh, L ^b   Tempel, G ^a   Groeseneken, G ^a  

^a INFINEON TECHNOLOGIES AG   (Germany)

^b Lnfineon Technologies affiliated at IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN; LEAKAGE CURRENTS; MOSFET DEVICES; OXIDES; SEMICONDUCTOR DEVICE MODELS; STATISTICAL METHODS; ULTRATHIN FILMS; VOLTAGE MEASUREMENT;

CONSTANT VOLTAGE STRESS; GATE VOLTAGE; PERCOLATION MODEL; PREBREAKDOWN CURRENT; STRESS INDUCED LEAKAGE CURRENT; ULTRATHIN OXIDE LAYERS;

GATES (TRANSISTOR);

EID: 0035714563     PISSN: 01631918     EISSN: None     Source Type: Journal    
DOI: 10.1109/IEDM.2001.979447     Document Type: Article

References (6)