Imaging breakdown spots in SiO2 films and MOS devices with a conductive atomic force microscope

IEEE Transactions on Device and Materials Reliability

Volumn 2, Issue 4, 2002, Pages 94-101

  Porti, Marc ^a   Blüm, Marie Christine ^b   Nafría, Montserrat ^a   Aymerich, Xavier ^a  

^a UNIVERSITAT AUTÒNOMA DE BARCELONA   (Spain)

^b UNIVERSITY OF LAUSANNE   (Switzerland)

Author keywords

Atomic force microscopy; Current limitation; Dielectric breakdown; MOS structure; SiO2 films

Indexed keywords

ATOMIC FORCE MICROSCOPY; ELECTRIC CURRENTS; SILICA;

CURRENT LIMITATION; DIELECTRIC BREAKDOWN; MOS STRUCTURE;

METALLIC FILMS;

EID: 33644616608     PISSN: 15304388     EISSN: 15304388     Source Type: Journal    
DOI: 10.1109/TDMR.2002.805355     Document Type: Article

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