Electrical and materials characterization of GSMBE grown Si 1-x-yGexCy layers for heterojunction bipolar transistor applications

Semiconductor Science and Technology

Volumn 20, Issue 1, 2005, Pages 95-102

  Mitrovic, I Z ^a   Buiu, O ^a   Hall, S ^a   Zhang, J ^b   Wang, Y ^c,e   Hemment, P L F ^c   El Mubarek, H A W ^d   Ashburn, P ^d  

^a UNIVERSITY OF LIVERPOOL   (United Kingdom)

^b IMPERIAL COLLEGE LONDON   (United Kingdom)

^c UNIVERSITY OF SURREY   (United Kingdom)

^d UNIVERSITY OF SOUTHAMPTON   (United Kingdom)

^e BRUNEL UNIVERSITY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CHEMICAL VAPOR DEPOSITION; ELLIPSOMETRY; LEAKAGE CURRENTS; MOLECULAR BEAM EPITAXY; SEMICONDUCTING SILICON COMPOUNDS; SILICON ALLOYS; SPECTROSCOPIC ANALYSIS; STRAIN; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

CAPACITANCE-TRANSIENT TECHNIQUES; COHERENT INTERFACES; GAS SOURCE MOLECULAR BEAM EPITAXY (GSMBE); SPECTROSCOPIC ELLIPSOMETRY (SE);

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 11844264832     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/20/1/016     Document Type: Article

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